Electron-strain interaction in CeAs

T. Goto, K. Morita, H. Matsui, S. Nakamura, R. Settai, Y. Haga, T. Suzuki, M. Kataoka, S. Sakatsume

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Electron-strain interaction in CeAs has been investigated by ultrasonic measurements. Elastic softening reflecting the crystalline field state of Γ7(0 K) and Γ8 (160 K) has been found in the C44 mode. The character of the acoustic de Haas-van Alphen (dHvA) defect on the β hole surface is discussed.

Original languageEnglish
Pages (from-to)517-519
Number of pages3
JournalPhysica B: Physics of Condensed Matter
Issue numberC
Publication statusPublished - 1994 Apr 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Electron-strain interaction in CeAs'. Together they form a unique fingerprint.

Cite this