Electron-strain interaction in CeAs

T. Goto, K. Morita, H. Matsui, S. Nakamura, R. Settai, Y. Haga, T. Suzuki, M. Kataoka, S. Sakatsume

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Electron-strain interaction in CeAs has been investigated by ultrasonic measurements. Elastic softening reflecting the crystalline field state of Γ7(0 K) and Γ8 (160 K) has been found in the C44 mode. The character of the acoustic de Haas-van Alphen (dHvA) defect on the β hole surface is discussed.

Original languageEnglish
Pages (from-to)517-519
Number of pages3
JournalPhysica B: Physics of Condensed Matter
Volume199-200
Issue numberC
DOIs
Publication statusPublished - 1994 Apr 2

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Goto, T., Morita, K., Matsui, H., Nakamura, S., Settai, R., Haga, Y., Suzuki, T., Kataoka, M., & Sakatsume, S. (1994). Electron-strain interaction in CeAs. Physica B: Physics of Condensed Matter, 199-200(C), 517-519. https://doi.org/10.1016/0921-4526(94)91889-9