Electron spin dynamics in InGaAs quantum wells

K. Morita, H. Sanada, S. Matsuzaka, C. Y. Hu, Y. Ohno, H. Ohno

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)

Abstract

Electron spin dynamics in strained In0.1Ga 0.9As/Al0.4Ga0.6As quantum wells (QWs) on (100) and (110)-oriented substrates are investigated by time-resolved Faraday rotation. We find that the spin relaxation time in (110) QWs is 6 times longer than that in (100) QWs at low temperatures, which is strongly reduced by applying magnetic fields. The sign of g-factor is found positive and its magnitude decreases with increasing well width, in the well width range investigated here.

Original languageEnglish
Pages (from-to)1007-1011
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume21
Issue number2-4
DOIs
Publication statusPublished - 2004 Mar
EventProceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan
Duration: 2003 Jul 142003 Jul 18

Keywords

  • Electron g-factor
  • Electron spin
  • InGaAs/AlGaAs QWs
  • Spin relaxation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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