Electron scattering times in ZnO based polar heterostructures

J. Falson, Y. Kozuka, J. H. Smet, T. Arima, A. Tsukazaki, M. Kawasaki

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)

Abstract

The remarkable historic advances experienced in condensed matter physics have been enabled through the continued exploration and proliferation of increasingly richer and cleaner material systems. In this work, we report on the scattering times of charge carriers confined in state-of-the-art MgZnO/ZnO heterostructures displaying electron mobilities in excess of 106 cm2/V s. Through an examination of low field quantum oscillations, we obtain the effective mass of charge carriers, along with the transport and quantum scattering times. These times compare favorably with high mobility AlGaAs/GaAs heterostructures, suggesting the quality of MgZnO/ZnO heterostructures now rivals that of traditional semiconductors.

Original languageEnglish
Article number082102
JournalApplied Physics Letters
Volume107
Issue number8
DOIs
Publication statusPublished - 2015 Aug 24

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Electron scattering times in ZnO based polar heterostructures'. Together they form a unique fingerprint.

Cite this