Electron population above 13.5 eV in ultrahigh frequency and inductively coupled plasmas through C2F4/CF3I and C4F8/Ar gas mixtures

Toshiki Nakano, Seiji Samukawa

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

Argon emission analysis and Langmuir probe measurements were used to study the electron population above 13.5 eV in the plasma, used for fine structure etching of silicon dioxide. Weaker dependence on the gas composition for the C2F4/CF3I mixture was found using integrated electron energy distribution function (eedf) above threshold energy for argon 750.4 nm emission. The results indicate that lower charging damage of devices is expected in silica etching using the C2F4CF3I chemistry.

Original languageEnglish
Pages (from-to)2774-2779
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number6
DOIs
Publication statusPublished - 2000 Nov 1
Event44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA
Duration: 2000 May 302000 Jun 2

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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