Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching

Y. X. Liu, E. Sugimata, M. Masahara, Kazuhiko Endo, K. Ishii, T. Matsukawa, H. Takashima, H. Yamauchi, E. Suzuki

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)

Abstract

This paper presents, for the first time, the experimental electron mobility in FinFETs with a (111) channel surface fabricated by the orientation-dependent wet etching. The maximum electron mobility (u eff) is around 300-cm 2 /V-s, which is close to that in the (111) bulk MOSFETs. Moreover, the value of u eff is comparable or better than the reported ones in the usual FinFETs with a (110) channel surface prepared with careful surface treatments. This result indicates that the quality and channel surface roughness of the Si-fins by the orientation-dependent wet etching are much better than those fabricated by the conventional reactive ion etching (RIE) process.

Original languageEnglish
Pages (from-to)390-393
Number of pages4
JournalMicroelectronic Engineering
Volume80
Issue numberSUPPL.
DOIs
Publication statusPublished - 2005 Jun 17
Externally publishedYes
Event14th Biennial Conference on Insulating Films on Semiconductors -
Duration: 2005 Jun 222005 Jun 24

Keywords

  • Double-gate MOSFET
  • FinFET
  • Mobility
  • Orientation-dependent wet etching
  • Rectangular cross-section Si-fin

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching'. Together they form a unique fingerprint.

Cite this