Abstract
The electron mobility and the channel thickness dependences of ultrathin-body (UTB) strained silicon-on-insulator (sSOI) metal-oxide- semiconductor field-effect transistors (MOSFETs) were investigated. Ultrathin silicon channels less than 10 nm in thickness were formed by defect-free wet etching. Both UTB-sSOI MOSFETs and UTB-SOI MOSFETs revealed superior subthreshold swing. The electron mobility of the UTB-sSOI MOSFETs was larger than that of the UTB-SOI MOSFETs. However, the enhanced mobility of the UTB sSOI-MOSFETs was not observed for channel thicknesses less than 10 nm. The monotonic decrease of the electron mobility is related to the inter-valley phonon scattering and variation in the channel-thickness scattering caused by the quantum confinement effect.
| Original language | English |
|---|---|
| Pages (from-to) | 1840-1843 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 54 |
| Issue number | 5 PART 1 |
| Publication status | Published - 2009 May 1 |
| Externally published | Yes |
Keywords
- Quantum confinement effect
- Strained-Si
- Subband splitting
- UTB
ASJC Scopus subject areas
- Physics and Astronomy(all)