Electron mobility behavior of Ge-Free ultrathin-body (UTB) strained-SOl (sSOl) MOSFETs

Kwan Su Kim, Won Ju Cho

Research output: Contribution to journalArticlepeer-review

Abstract

The electron mobility and the channel thickness dependences of ultrathin-body (UTB) strained silicon-on-insulator (sSOI) metal-oxide- semiconductor field-effect transistors (MOSFETs) were investigated. Ultrathin silicon channels less than 10 nm in thickness were formed by defect-free wet etching. Both UTB-sSOI MOSFETs and UTB-SOI MOSFETs revealed superior subthreshold swing. The electron mobility of the UTB-sSOI MOSFETs was larger than that of the UTB-SOI MOSFETs. However, the enhanced mobility of the UTB sSOI-MOSFETs was not observed for channel thicknesses less than 10 nm. The monotonic decrease of the electron mobility is related to the inter-valley phonon scattering and variation in the channel-thickness scattering caused by the quantum confinement effect.

Original languageEnglish
Pages (from-to)1840-1843
Number of pages4
JournalJournal of the Korean Physical Society
Volume54
Issue number5 PART 1
Publication statusPublished - 2009 May 1
Externally publishedYes

Keywords

  • Quantum confinement effect
  • Strained-Si
  • Subband splitting
  • UTB

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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