Electron localization in nanoscale MnAs dots on GaAs: A photoemission study

Kanta Ono, Masaki Mizuguchi, Takeshi Uragami, Hiroyuki Akinaga, Hiroshi Fujioka, Masaharu Oshima

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We have investigated the electronic structure of MnAs dots on GaAs (1 0 0) by photoemission spectroscopy. MnAs dots are grown on the S-passivated GaAs by MBE. The size of the dots is 15 nm. In the valence band photoemission spectra of MnAs dots, the Fermi edge disappears, and there is no spectral intensity at the Fermi level. In the Mn 2p core level spectra of MnAs dots, we have observed a satellite structure which also reflects the 3d electron localization in the MnAs dots.

Original languageEnglish
Pages (from-to)1778-1779
Number of pages2
JournalPhysica B: Condensed Matter
Volume284-288
Issue numberPART II
DOIs
Publication statusPublished - 2000 Jan 1
Externally publishedYes

Keywords

  • Dots
  • MnAs
  • Photoemission

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Ono, K., Mizuguchi, M., Uragami, T., Akinaga, H., Fujioka, H., & Oshima, M. (2000). Electron localization in nanoscale MnAs dots on GaAs: A photoemission study. Physica B: Condensed Matter, 284-288(PART II), 1778-1779. https://doi.org/10.1016/S0921-4526(99)02967-1