Abstract
We have investigated the electronic structure of MnAs dots on GaAs (1 0 0) by photoemission spectroscopy. MnAs dots are grown on the S-passivated GaAs by MBE. The size of the dots is 15 nm. In the valence band photoemission spectra of MnAs dots, the Fermi edge disappears, and there is no spectral intensity at the Fermi level. In the Mn 2p core level spectra of MnAs dots, we have observed a satellite structure which also reflects the 3d electron localization in the MnAs dots.
| Original language | English |
|---|---|
| Pages (from-to) | 1778-1779 |
| Number of pages | 2 |
| Journal | Physica B: Condensed Matter |
| Volume | 284-288 |
| Issue number | PART II |
| DOIs | |
| Publication status | Published - 2000 Jan 1 |
| Externally published | Yes |
Keywords
- Dots
- MnAs
- Photoemission
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Cite this
Ono, K., Mizuguchi, M., Uragami, T., Akinaga, H., Fujioka, H., & Oshima, M. (2000). Electron localization in nanoscale MnAs dots on GaAs: A photoemission study. Physica B: Condensed Matter, 284-288(PART II), 1778-1779. https://doi.org/10.1016/S0921-4526(99)02967-1