Electron-irradiation-induced disordering of CuPt-ordered GaInP studied by TEM-mode optical spectroscopy

Y. Ohno, Y. Kawai, S. Takeda

Research output: Contribution to conferencePaperpeer-review

Abstract

Electron-irradiation-induced disordering in CuPt-ordered GaInP has been examined by in-situ photoluminescence and cathodoluminescence spectroscopy in a transmission electron microscope. A decrease of luminescence intensity by an electron-irradiation in the energy range above 120 keV has been observed, and we have shown that the decrease is due to the Frenkel-type defects on the Ga and In sublattices generated by electron-irradiation. We have proposed that an electron-irradiation-induced migration of the Ga- and In-vacancies dominates the disordering in the dose range below 2×1020 cm2.

Original languageEnglish
Pages173-176
Number of pages4
Publication statusPublished - 1999
Externally publishedYes
EventProceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) - Berkeley, CA, USA
Duration: 1998 Jun 11998 Jun 5

Other

OtherProceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)
CityBerkeley, CA, USA
Period98/6/198/6/5

ASJC Scopus subject areas

  • Engineering(all)

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