TY - JOUR
T1 - Electron-Ion mixed conduction of BaCe0.90Y0.10O3-δ Thin film generated by Ru substitution
AU - Ochi, Masanori
AU - Tsuchiya, Takashi
AU - Yamaguchi, Shohei
AU - Suetsugu, Takaaki
AU - Suzuki, Naoya
AU - Kobayashi, Masaki
AU - Minohara, Makoto
AU - Horiba, Koji
AU - Kumigashira, Hiroshi
AU - Higuchi, Tohru
N1 - Funding Information:
We would like to thank Ms. Chizuko Kudo for her technical support. The work at KEK was carried out under the approval of the Program Advisory Committee (Proposal No. 2013S2-002) of the Institute of Material Structure Science, KEK. This work was partially supported by a Grant-in-Aid for Scientific Research (B25287095) from the Japan Society for the Promotion of Science (JSPS) and the MEXT Element Strategy Initiative to Form Core Research Center.
PY - 2016
Y1 - 2016
N2 - The structural and electrical properties of a c-Axis-oriented BaCe0.85Ru0.05Y0.10O3-δ (BCRY) thin film on an Al2O3(0001) substrate depending on film thickness have been studied. The lattice constant of the c-Axis decreases with increasing film thickness. The electrical conductivity is higher in the thin film with a small lattice constant. The activation energy (EA) of the dry BCRY thin film with a high conductivity is 0.26 eV, which corresponds to half of that of the bulk ceramic. The BCRY thin film exhibits electron-ion mixed conduction with a small EA of 0.18 eV below 400 °C in H2O atmosphere. The Ce3+ state created by oxygen vacancies, which locates at the top of the valence band, plays an important role in the electron-ion mixed conduction or proton conduction of the BCRY thin film.
AB - The structural and electrical properties of a c-Axis-oriented BaCe0.85Ru0.05Y0.10O3-δ (BCRY) thin film on an Al2O3(0001) substrate depending on film thickness have been studied. The lattice constant of the c-Axis decreases with increasing film thickness. The electrical conductivity is higher in the thin film with a small lattice constant. The activation energy (EA) of the dry BCRY thin film with a high conductivity is 0.26 eV, which corresponds to half of that of the bulk ceramic. The BCRY thin film exhibits electron-ion mixed conduction with a small EA of 0.18 eV below 400 °C in H2O atmosphere. The Ce3+ state created by oxygen vacancies, which locates at the top of the valence band, plays an important role in the electron-ion mixed conduction or proton conduction of the BCRY thin film.
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U2 - 10.7566/JPSJ.85.034705
DO - 10.7566/JPSJ.85.034705
M3 - Article
AN - SCOPUS:84974601746
VL - 85
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
SN - 0031-9015
IS - 3
M1 - 034705
ER -