Electron g factor in a gated InGaAs channel with double InAs-inserted wells

Y. Lin, J. Nitta, T. Koga, T. Akazaki

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)


We report the gate-voltage dependence of the electron g factor in InGaAs/InAlAs heterostructures with double InAs-inserted wells. The g factor has been determined from a series of Shubnikov-de Haas oscillations at various angles with respect to the layers under different gate voltages. The strain in InAs layers and the penetration of the electron wave function into InGaAs and InAlAs layers are the important factors of the reduction in the |g| factor. We have also observed the changes of the |g| factor with respect to the gate voltage, though this dependence is not clear in the simple calculation.

Original languageEnglish
Pages (from-to)656-660
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number2-4
Publication statusPublished - 2004 Mar
Externally publishedYes
EventProceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan
Duration: 2003 Jul 142003 Jul 18


  • InAlAs
  • InGaAs
  • Quantum well
  • g factor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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