Electron g factor in a gated InGaAs channel with double InAs-inserted wells

Y. Lin; J. Nitta; T. Koga; T. Akazaki

doi:10.1016/j.physe.2003.11.098

Electron g factor in a gated InGaAs channel with double InAs-inserted wells

Y. Lin, J. Nitta, T. Koga, T. Akazaki

Research output: Contribution to journal › Conference article › peer-review

11 Citations (Scopus)

Abstract

We report the gate-voltage dependence of the electron g factor in InGaAs/InAlAs heterostructures with double InAs-inserted wells. The g factor has been determined from a series of Shubnikov-de Haas oscillations at various angles with respect to the layers under different gate voltages. The strain in InAs layers and the penetration of the electron wave function into InGaAs and InAlAs layers are the important factors of the reduction in the |g| factor. We have also observed the changes of the |g| factor with respect to the gate voltage, though this dependence is not clear in the simple calculation.

Original language	English
Pages (from-to)	656-660
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	21
Issue number	2-4
DOIs	https://doi.org/10.1016/j.physe.2003.11.098
Publication status	Published - 2004 Mar
Externally published	Yes
Event	Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan Duration: 2003 Jul 14 → 2003 Jul 18

Keywords

InAlAs
InGaAs
Quantum well
g factor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Access to Document

10.1016/j.physe.2003.11.098

Cite this

@article{72ce0f47281c4879a5702b44fda81354,

title = "Electron g factor in a gated InGaAs channel with double InAs-inserted wells",

abstract = "We report the gate-voltage dependence of the electron g factor in InGaAs/InAlAs heterostructures with double InAs-inserted wells. The g factor has been determined from a series of Shubnikov-de Haas oscillations at various angles with respect to the layers under different gate voltages. The strain in InAs layers and the penetration of the electron wave function into InGaAs and InAlAs layers are the important factors of the reduction in the |g| factor. We have also observed the changes of the |g| factor with respect to the gate voltage, though this dependence is not clear in the simple calculation.",

keywords = "InAlAs, InGaAs, Quantum well, g factor",

author = "Y. Lin and J. Nitta and T. Koga and T. Akazaki",

note = "Funding Information: This work has been supported by the NEDO International Joint Grant Program.; Proceedings of the Eleventh International Conference on Modulation (MSS11) ; Conference date: 14-07-2003 Through 18-07-2003",

year = "2004",

month = mar,

doi = "10.1016/j.physe.2003.11.098",

language = "English",

volume = "21",

pages = "656--660",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "2-4",

}

TY - JOUR

T1 - Electron g factor in a gated InGaAs channel with double InAs-inserted wells

AU - Lin, Y.

AU - Nitta, J.

AU - Koga, T.

AU - Akazaki, T.

N1 - Funding Information: This work has been supported by the NEDO International Joint Grant Program.

PY - 2004/3

Y1 - 2004/3

N2 - We report the gate-voltage dependence of the electron g factor in InGaAs/InAlAs heterostructures with double InAs-inserted wells. The g factor has been determined from a series of Shubnikov-de Haas oscillations at various angles with respect to the layers under different gate voltages. The strain in InAs layers and the penetration of the electron wave function into InGaAs and InAlAs layers are the important factors of the reduction in the |g| factor. We have also observed the changes of the |g| factor with respect to the gate voltage, though this dependence is not clear in the simple calculation.

AB - We report the gate-voltage dependence of the electron g factor in InGaAs/InAlAs heterostructures with double InAs-inserted wells. The g factor has been determined from a series of Shubnikov-de Haas oscillations at various angles with respect to the layers under different gate voltages. The strain in InAs layers and the penetration of the electron wave function into InGaAs and InAlAs layers are the important factors of the reduction in the |g| factor. We have also observed the changes of the |g| factor with respect to the gate voltage, though this dependence is not clear in the simple calculation.

KW - InAlAs

KW - InGaAs

KW - Quantum well

KW - g factor

UR - http://www.scopus.com/inward/record.url?scp=1642382416&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1642382416&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2003.11.098

DO - 10.1016/j.physe.2003.11.098

M3 - Conference article

AN - SCOPUS:1642382416

VL - 21

SP - 656

EP - 660

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 2-4

T2 - Proceedings of the Eleventh International Conference on Modulation (MSS11)

Y2 - 14 July 2003 through 18 July 2003

ER -

Electron g factor in a gated InGaAs channel with double InAs-inserted wells

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this