Electron g -factor in a gated InAs-inserted-channel In 0.53Ga0.47As/In0.52Al0.48As heterostructure

Junsaku Nitta, Yiping Lin, Takaaki Koga, Tatsushi Akazaki

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)


We report on electron g-factor in an InAs-inserted In0.53Ga 0.47As/In0.52Al0.48As heterostructure. The gate voltage dependence of g-factor is obtained from the coincidence method. The obtained g-factor values are surprisingly smaller than the g-factor value of bulk InAs, and it is close to the bare g-factor value of In 0.53Ga0.47As. The large change in g-factor is observed by applying the gate voltage. The obtained gate voltage dependence is not simply explained by the energy dependence of g-factor.

Original languageEnglish
Pages (from-to)429-432
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number3-4
Publication statusPublished - 2004 Jan
Externally publishedYes
EventProceedings of the 11th International Conference on Narrow Gap - Buffalo, NY., United States
Duration: 2003 Jun 162003 Jun 20


  • Coincidence method
  • InAs-inserted InGaAs/InAlAs heterostructure
  • Shubnikov-de Hass oscillations
  • g-factor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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