Electron g factor engineering in III-V semiconductors for quantum communications

H. Kosaka, A. A. Kiselev, F. A. Baron, Ki Wook Kim, E. Yablonovitch

Research output: Contribution to journalArticle

97 Citations (Scopus)

Abstract

An entanglement-preserving photodetector converts photon polarisation to electron spin. Up and down spin must respond equally to oppositely polarised photons, creating a requirement for degenerate spin energies, ge ≃ 0, for electrons. The authors present a plot of ge factor against lattice constant, analogous to bandgap against lattice constant, that can be used for g factor engineering of III-V alloys and quantum wells.

Original languageEnglish
Pages (from-to)464-465
Number of pages2
JournalElectronics Letters
Volume37
Issue number7
DOIs
Publication statusPublished - 2001 Mar 29

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Electron g factor engineering in III-V semiconductors for quantum communications'. Together they form a unique fingerprint.

  • Cite this

    Kosaka, H., Kiselev, A. A., Baron, F. A., Kim, K. W., & Yablonovitch, E. (2001). Electron g factor engineering in III-V semiconductors for quantum communications. Electronics Letters, 37(7), 464-465. https://doi.org/10.1049/el:20010314