Electron g-factor and spin decoherence in GaAs quantum nanodisks fabricated by fully top-down lithography

Toru Tanaka, Takayuki Kiba, Akio Higo, Cedric Thomas, Yosuke Tamura, Seiji Samukawa, Akihiro Murayama

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

GaAs nanodisks (NDs), with a thickness of 8 nm and a diameter of 15 nm, were directly fabricated from GaAs quantum wells (QW) by damage-free neutral-beam etching using bio-nanotemplates. We observed the electron g-factor and spin dephasing in NDs with different barrier heights in the lateral direction by means of time-resolved Kerr rotation. The magnitude of the g-factor depends on the degree of lateral confinement originating from enhanced penetration of the electron wavefunction from an ND into the surrounding AlGaAs barriers. The spin-dephasing time is also observed to be altered by ND formation.

Original languageEnglish
Pages (from-to)295-298
Number of pages4
JournalJournal of Crystal Growth
Volume425
DOIs
Publication statusPublished - 2015 Jul 28

Keywords

  • A1: Nanostructures
  • B1: Nanomaterials
  • B2.Semiconducting gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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