Electron emission from indium tin oxide/silicon monoxide/gold structure

Magdy Hussein Mourad, Kentaro Totsu, Shinya Kumagai, Seiji Samukawa, Masayoshi Esashi

Research output: Contribution to journalArticle

Abstract

A field-emission cathode based upon the increase in the number of allowed conductive energy states in the silicon monoxide (SiO) forbidden gap as well as the increase in the number of interfacial states by indium tin oxide (ITO) ion diffusion into the SiO layer and silicon ion diffusion into the ITO layer while deposition is verified experimentally for the first time. This relatively low-cost electron emitter consists of an ITO layer sputtered on Pyrex glass, followed by an E-beam-evaporated silicon monoxide layer. The emitting layer is gold, deposited on the top of the silicon monoxide. Using ITO as a ground plate, instead of other previously published materials, a significant electron emission enhancement occurred.

Original languageEnglish
Pages (from-to)1414-1418
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number3
DOIs
Publication statusPublished - 2005 Mar

Keywords

  • Electron emission
  • Indium tin oxide
  • Ionic diffusion
  • Negative resistance
  • Quantum tunneling
  • Silicon monoxide

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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