Electron emission from conduction band of diamond with negative electron affinity

H. Yamaguchi, T. Masuzawa, S. Nozue, Y. Kudo, I. Saito, J. Koe, M. Kudo, T. Yamada, Y. Takakuwa, K. Okano

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52 Citations (Scopus)

Abstract

Experimental evidence explaining the extremely low-threshold electron emission from diamond reported in 1996 has been obtained. Direct observation using combined ultraviolet photoelectron spectroscopy/field-emission spectroscopy proved that the origin of field-induced electron emission from heavily nitrogen (N)-doped chemical-vapor deposited (CVD) diamond was at conduction-band minimum utilizing negative-electron affinity (NEA). The significance of the result is that not only does it prove the utilization of NEA as the dominant factor for the extremely low-threshold electron emission from heavily N-doped CVD diamond but also strongly implies that such low-threshold emission is possible from other types of diamond and even other materials having NEA surface. The low-threshold voltage, along with the stable intensity and remarkably narrow energy width, suggests that this type of electron emission can be applied to develop a next generation vacuum nanoelectronic devices with long lifetime and high-energy resolution.

Original languageEnglish
Article number165321
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume80
Issue number16
DOIs
Publication statusPublished - 2009 Oct 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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