We studied electron density (n) dependence of the extrinsic spin Hall effect in n -doped GaAs with n raging from 1.8× 1016 to 3.3× 1017 cm-3. By scanning Kerr microscopy measurements, we observed spin accumulation near the channel edges in all the samples due to the extrinsic spin Hall effect. The spin Hall conductivity σSH is obtained for each sample by comparing the Kerr rotation induced by optically injected spins. σSH is found to increase with n, and it is shown that a theoretical model reported earlier agrees well with the experimental n dependence of σSH.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2009 Dec 9|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics