Electron density dependence of the spin Hall effect in GaAs probed by scanning Kerr rotation microscopy

S. Matsuzaka, Y. Ohno, H. Ohno

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)

Abstract

We studied electron density (n) dependence of the extrinsic spin Hall effect in n -doped GaAs with n raging from 1.8× 1016 to 3.3× 1017 cm-3. By scanning Kerr microscopy measurements, we observed spin accumulation near the channel edges in all the samples due to the extrinsic spin Hall effect. The spin Hall conductivity σSH is obtained for each sample by comparing the Kerr rotation induced by optically injected spins. σSH is found to increase with n, and it is shown that a theoretical model reported earlier agrees well with the experimental n dependence of σSH.

Original languageEnglish
Article number241305
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume80
Issue number24
DOIs
Publication statusPublished - 2009 Dec 9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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