Electron-cyclotron-resonance plasma-enhanced chemical vapor deposition of epitaxial Si without substrate heating by ultraclean processing

Koichi Fukuda, Junichi Murota, Shoichi Ono, Takashi Matsuura, Hiroaki Uetake, Tadahiro Ohmi

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

By Ar plasma-enhanced decomposition of SiH4 using ultraclean electron-cyclotron-resonance plasma processing, low-temperature Si epitaxy has been achieved even without external substrate heating for the first time. Ar plasma pre-exposure experiments have revealed that Ar ion energies lower than a few eV are favorable for Si epitaxy at low temperatures, in order to suppress plasma damage on the surface crystallinity. Furthermore, it has been found that addition of H2 to the Ar plasma is extremely effective to remove the native oxide layer on the Si surface.

Original languageEnglish
Pages (from-to)2853-2855
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number22
DOIs
Publication statusPublished - 1991 Dec 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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