Electron conduction of Nd0.6Sr0.4FeO3−δ thin film with oxygen vacancies prepared by RF magnetron sputtering

Wataru Namiki; Takashi Tsuchiya; Makoto Takayanagi; Shoto Furuichi; Makoto Minohara; Masaki Kobayashi; Koji Horiba; Hiroshi Kumigashira; Tohru Higuchi

doi:10.7566/JPSJ.86.074704

Electron conduction of Nd_0.6Sr_0.4FeO_3−δ thin film with oxygen vacancies prepared by RF magnetron sputtering

Wataru Namiki, Takashi Tsuchiya, Makoto Takayanagi, Shoto Furuichi, Makoto Minohara, Masaki Kobayashi, Koji Horiba, Hiroshi Kumigashira, Tohru Higuchi

Research output: Contribution to journal › Article › peer-review

Abstract

We have firstly studied the electrical conductivity and the electronic structure of the Nd_0.6Sr_0.4FeO₃−_δ (NSFO) thin film on Al₂O₃(0001) substrate deposited by RF magnetron sputtering. The prepared thin film has larger lattice constant than the bulk crystal due to the stress from the substrate and the oxygen vacancies. The Fe 2p photoemission spectrum exhibits the mixed valence states of Fe²⁺ and Fe³⁺. The electrical conductivity exhibits thermal activation-type behavior and increases with increasing film thickness. The band gap of charge transfer type is in a good agreement with the activation energy estimated from the Arrhenius plot. These results indicate the conducting carrier of the NSFO thin film is mainly electron, although the conductivity does not depend on oxygen gas partial pressure.

Original language	English
Article number	074704
Journal	journal of the physical society of japan
Volume	86
Issue number	7
DOIs	https://doi.org/10.7566/JPSJ.86.074704
Publication status	Published - 2017 Jul 15
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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Electron conduction of Nd_0.6Sr_0.4FeO_3−δ thin film with oxygen vacancies prepared by RF magnetron sputtering. / Namiki, Wataru; Tsuchiya, Takashi; Takayanagi, Makoto; Furuichi, Shoto; Minohara, Makoto; Kobayashi, Masaki; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru.

In: journal of the physical society of japan, Vol. 86, No. 7, 074704, 15.07.2017.

Research output: Contribution to journal › Article › peer-review

@article{417d29d70f024a1b81d4fd602c6c33db,

title = "Electron conduction of Nd0.6Sr0.4FeO3−δ thin film with oxygen vacancies prepared by RF magnetron sputtering",

abstract = "We have firstly studied the electrical conductivity and the electronic structure of the Nd0.6Sr0.4FeO3−δ (NSFO) thin film on Al2O3(0001) substrate deposited by RF magnetron sputtering. The prepared thin film has larger lattice constant than the bulk crystal due to the stress from the substrate and the oxygen vacancies. The Fe 2p photoemission spectrum exhibits the mixed valence states of Fe2+ and Fe3+. The electrical conductivity exhibits thermal activation-type behavior and increases with increasing film thickness. The band gap of charge transfer type is in a good agreement with the activation energy estimated from the Arrhenius plot. These results indicate the conducting carrier of the NSFO thin film is mainly electron, although the conductivity does not depend on oxygen gas partial pressure.",

author = "Wataru Namiki and Takashi Tsuchiya and Makoto Takayanagi and Shoto Furuichi and Makoto Minohara and Masaki Kobayashi and Koji Horiba and Hiroshi Kumigashira and Tohru Higuchi",

note = "Funding Information: We would like to thank Ms. Chizuko Kudo and Mr. Naoya Suzuki for their technical supports. This work was supported by a Grant-in-Aid for Scientific Research (Grant No. 16H02115) from the Japan Society for the Promotion of Science and the MEXT Element Strategy Initiative to Form Core Research Center. The work at KEK was done under the approval of the Program Advisory Committee (Proposal Nos. 2015S2-005 and 2016G003) at the Institute of Materials Structure Science, KEK.",

year = "2017",

month = jul,

day = "15",

doi = "10.7566/JPSJ.86.074704",

language = "English",

volume = "86",

journal = "Journal of the Physical Society of Japan",

issn = "0031-9015",

publisher = "Physical Society of Japan",

number = "7",

}

TY - JOUR

T1 - Electron conduction of Nd0.6Sr0.4FeO3−δ thin film with oxygen vacancies prepared by RF magnetron sputtering

AU - Namiki, Wataru

AU - Tsuchiya, Takashi

AU - Takayanagi, Makoto

AU - Furuichi, Shoto

AU - Minohara, Makoto

AU - Kobayashi, Masaki

AU - Horiba, Koji

AU - Kumigashira, Hiroshi

AU - Higuchi, Tohru

N1 - Funding Information: We would like to thank Ms. Chizuko Kudo and Mr. Naoya Suzuki for their technical supports. This work was supported by a Grant-in-Aid for Scientific Research (Grant No. 16H02115) from the Japan Society for the Promotion of Science and the MEXT Element Strategy Initiative to Form Core Research Center. The work at KEK was done under the approval of the Program Advisory Committee (Proposal Nos. 2015S2-005 and 2016G003) at the Institute of Materials Structure Science, KEK.

PY - 2017/7/15

Y1 - 2017/7/15

N2 - We have firstly studied the electrical conductivity and the electronic structure of the Nd0.6Sr0.4FeO3−δ (NSFO) thin film on Al2O3(0001) substrate deposited by RF magnetron sputtering. The prepared thin film has larger lattice constant than the bulk crystal due to the stress from the substrate and the oxygen vacancies. The Fe 2p photoemission spectrum exhibits the mixed valence states of Fe2+ and Fe3+. The electrical conductivity exhibits thermal activation-type behavior and increases with increasing film thickness. The band gap of charge transfer type is in a good agreement with the activation energy estimated from the Arrhenius plot. These results indicate the conducting carrier of the NSFO thin film is mainly electron, although the conductivity does not depend on oxygen gas partial pressure.

AB - We have firstly studied the electrical conductivity and the electronic structure of the Nd0.6Sr0.4FeO3−δ (NSFO) thin film on Al2O3(0001) substrate deposited by RF magnetron sputtering. The prepared thin film has larger lattice constant than the bulk crystal due to the stress from the substrate and the oxygen vacancies. The Fe 2p photoemission spectrum exhibits the mixed valence states of Fe2+ and Fe3+. The electrical conductivity exhibits thermal activation-type behavior and increases with increasing film thickness. The band gap of charge transfer type is in a good agreement with the activation energy estimated from the Arrhenius plot. These results indicate the conducting carrier of the NSFO thin film is mainly electron, although the conductivity does not depend on oxygen gas partial pressure.

UR - http://www.scopus.com/inward/record.url?scp=85022201342&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85022201342&partnerID=8YFLogxK

U2 - 10.7566/JPSJ.86.074704

DO - 10.7566/JPSJ.86.074704

M3 - Article

AN - SCOPUS:85022201342

VL - 86

JO - Journal of the Physical Society of Japan

JF - Journal of the Physical Society of Japan

SN - 0031-9015

IS - 7

M1 - 074704

ER -