Electron conduction of Nd0.6Sr0.4FeO3−δ thin film with oxygen vacancies prepared by RF magnetron sputtering

Wataru Namiki, Takashi Tsuchiya, Makoto Takayanagi, Shoto Furuichi, Makoto Minohara, Masaki Kobayashi, Koji Horiba, Hiroshi Kumigashira, Tohru Higuchi

Research output: Contribution to journalArticlepeer-review

Abstract

We have firstly studied the electrical conductivity and the electronic structure of the Nd0.6Sr0.4FeO3δ (NSFO) thin film on Al2O3(0001) substrate deposited by RF magnetron sputtering. The prepared thin film has larger lattice constant than the bulk crystal due to the stress from the substrate and the oxygen vacancies. The Fe 2p photoemission spectrum exhibits the mixed valence states of Fe2+ and Fe3+. The electrical conductivity exhibits thermal activation-type behavior and increases with increasing film thickness. The band gap of charge transfer type is in a good agreement with the activation energy estimated from the Arrhenius plot. These results indicate the conducting carrier of the NSFO thin film is mainly electron, although the conductivity does not depend on oxygen gas partial pressure.

Original languageEnglish
Article number074704
Journaljournal of the physical society of japan
Volume86
Issue number7
DOIs
Publication statusPublished - 2017 Jul 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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