TY - JOUR
T1 - Electron conduction of Nd0.6Sr0.4FeO3−δ thin film with oxygen vacancies prepared by RF magnetron sputtering
AU - Namiki, Wataru
AU - Tsuchiya, Takashi
AU - Takayanagi, Makoto
AU - Furuichi, Shoto
AU - Minohara, Makoto
AU - Kobayashi, Masaki
AU - Horiba, Koji
AU - Kumigashira, Hiroshi
AU - Higuchi, Tohru
N1 - Funding Information:
We would like to thank Ms. Chizuko Kudo and Mr. Naoya Suzuki for their technical supports. This work was supported by a Grant-in-Aid for Scientific Research (Grant No. 16H02115) from the Japan Society for the Promotion of Science and the MEXT Element Strategy Initiative to Form Core Research Center. The work at KEK was done under the approval of the Program Advisory Committee (Proposal Nos. 2015S2-005 and 2016G003) at the Institute of Materials Structure Science, KEK.
Publisher Copyright:
©2017 The Physical Society of Japan.
PY - 2017/7/15
Y1 - 2017/7/15
N2 - We have firstly studied the electrical conductivity and the electronic structure of the Nd0.6Sr0.4FeO3−δ (NSFO) thin film on Al2O3(0001) substrate deposited by RF magnetron sputtering. The prepared thin film has larger lattice constant than the bulk crystal due to the stress from the substrate and the oxygen vacancies. The Fe 2p photoemission spectrum exhibits the mixed valence states of Fe2+ and Fe3+. The electrical conductivity exhibits thermal activation-type behavior and increases with increasing film thickness. The band gap of charge transfer type is in a good agreement with the activation energy estimated from the Arrhenius plot. These results indicate the conducting carrier of the NSFO thin film is mainly electron, although the conductivity does not depend on oxygen gas partial pressure.
AB - We have firstly studied the electrical conductivity and the electronic structure of the Nd0.6Sr0.4FeO3−δ (NSFO) thin film on Al2O3(0001) substrate deposited by RF magnetron sputtering. The prepared thin film has larger lattice constant than the bulk crystal due to the stress from the substrate and the oxygen vacancies. The Fe 2p photoemission spectrum exhibits the mixed valence states of Fe2+ and Fe3+. The electrical conductivity exhibits thermal activation-type behavior and increases with increasing film thickness. The band gap of charge transfer type is in a good agreement with the activation energy estimated from the Arrhenius plot. These results indicate the conducting carrier of the NSFO thin film is mainly electron, although the conductivity does not depend on oxygen gas partial pressure.
UR - http://www.scopus.com/inward/record.url?scp=85022201342&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85022201342&partnerID=8YFLogxK
U2 - 10.7566/JPSJ.86.074704
DO - 10.7566/JPSJ.86.074704
M3 - Article
AN - SCOPUS:85022201342
VL - 86
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
SN - 0031-9015
IS - 7
M1 - 074704
ER -