Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

J. Chen, T. Sekiguchi, R. Xie, P. Ahmet, T. Chikyo, D. Yang, S. Ito, F. Yin

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97 Citations (Scopus)


Recombination activity of small-angle grain boundaries (SA GBs) in multicrystalline silicon (mc-Si) was studied by means of electron-beam-induced current (EBIC) technique. In the as-grown mc-Si, the EBIC contrasts of special Σ and random GBs were weak at both 300 and 100 K, whereas those of SA GBs were weak (<3%) at 300 K and strong (30-40%) at 100 K. In the contaminated mc-Si, SA GBs showed stronger EBIC contrast than Σ and R GBs at 300 K. It is indicated that SA GBs possess high density of shallow levels and are easily contaminated with Fe compared to other GBs.

Original languageEnglish
Pages (from-to)1211-1215
Number of pages5
JournalScripta Materialia
Issue number12
Publication statusPublished - 2005 Jun
Externally publishedYes


  • EBIC
  • EBSD
  • Elemental semiconductor
  • Grain boundary defects

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys


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