Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

J. Chen; T. Sekiguchi; R. Xie; P. Ahmet; T. Chikyo; D. Yang; S. Ito; F. Yin

doi:10.1016/j.scriptamat.2005.03.010

Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

J. Chen, T. Sekiguchi, R. Xie, P. Ahmet, T. Chikyo, D. Yang, S. Ito, F. Yin

Research output: Contribution to journal › Article › peer-review

97 Citations (Scopus)

Abstract

Recombination activity of small-angle grain boundaries (SA GBs) in multicrystalline silicon (mc-Si) was studied by means of electron-beam-induced current (EBIC) technique. In the as-grown mc-Si, the EBIC contrasts of special Σ and random GBs were weak at both 300 and 100 K, whereas those of SA GBs were weak (<3%) at 300 K and strong (30-40%) at 100 K. In the contaminated mc-Si, SA GBs showed stronger EBIC contrast than Σ and R GBs at 300 K. It is indicated that SA GBs possess high density of shallow levels and are easily contaminated with Fe compared to other GBs.

Original language	English
Pages (from-to)	1211-1215
Number of pages	5
Journal	Scripta Materialia
Volume	52
Issue number	12
DOIs	https://doi.org/10.1016/j.scriptamat.2005.03.010
Publication status	Published - 2005 Jun
Externally published	Yes

Keywords

EBIC
EBSD
Elemental semiconductor
Grain boundary defects

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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10.1016/j.scriptamat.2005.03.010

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title = "Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon",

abstract = "Recombination activity of small-angle grain boundaries (SA GBs) in multicrystalline silicon (mc-Si) was studied by means of electron-beam-induced current (EBIC) technique. In the as-grown mc-Si, the EBIC contrasts of special Σ and random GBs were weak at both 300 and 100 K, whereas those of SA GBs were weak (<3%) at 300 K and strong (30-40%) at 100 K. In the contaminated mc-Si, SA GBs showed stronger EBIC contrast than Σ and R GBs at 300 K. It is indicated that SA GBs possess high density of shallow levels and are easily contaminated with Fe compared to other GBs.",

keywords = "EBIC, EBSD, Elemental semiconductor, Grain boundary defects",

author = "J. Chen and T. Sekiguchi and R. Xie and P. Ahmet and T. Chikyo and D. Yang and S. Ito and F. Yin",

note = "Funding Information: The authors would like to express their thanks to Dr. S. Nara (JFE Steel Co. Ltd, JAPAN) for his helpful supply of high purity mc-Si. They also thank Ms. K. Nakajima (Tokyo Institute of Technology, Japan) for the TEM observation. This work was partly done under the inter-university cooperative research program of the Institute for Materials Research, Tohoku University. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2005",

month = jun,

doi = "10.1016/j.scriptamat.2005.03.010",

language = "English",

volume = "52",

pages = "1211--1215",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Elsevier Limited",

number = "12",

}

TY - JOUR

T1 - Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

AU - Chen, J.

AU - Sekiguchi, T.

AU - Xie, R.

AU - Ahmet, P.

AU - Chikyo, T.

AU - Yang, D.

AU - Ito, S.

AU - Yin, F.

N1 - Funding Information: The authors would like to express their thanks to Dr. S. Nara (JFE Steel Co. Ltd, JAPAN) for his helpful supply of high purity mc-Si. They also thank Ms. K. Nakajima (Tokyo Institute of Technology, Japan) for the TEM observation. This work was partly done under the inter-university cooperative research program of the Institute for Materials Research, Tohoku University. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2005/6

Y1 - 2005/6

N2 - Recombination activity of small-angle grain boundaries (SA GBs) in multicrystalline silicon (mc-Si) was studied by means of electron-beam-induced current (EBIC) technique. In the as-grown mc-Si, the EBIC contrasts of special Σ and random GBs were weak at both 300 and 100 K, whereas those of SA GBs were weak (<3%) at 300 K and strong (30-40%) at 100 K. In the contaminated mc-Si, SA GBs showed stronger EBIC contrast than Σ and R GBs at 300 K. It is indicated that SA GBs possess high density of shallow levels and are easily contaminated with Fe compared to other GBs.

AB - Recombination activity of small-angle grain boundaries (SA GBs) in multicrystalline silicon (mc-Si) was studied by means of electron-beam-induced current (EBIC) technique. In the as-grown mc-Si, the EBIC contrasts of special Σ and random GBs were weak at both 300 and 100 K, whereas those of SA GBs were weak (<3%) at 300 K and strong (30-40%) at 100 K. In the contaminated mc-Si, SA GBs showed stronger EBIC contrast than Σ and R GBs at 300 K. It is indicated that SA GBs possess high density of shallow levels and are easily contaminated with Fe compared to other GBs.

KW - EBIC

KW - EBSD

KW - Elemental semiconductor

KW - Grain boundary defects

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DO - 10.1016/j.scriptamat.2005.03.010

M3 - Article

AN - SCOPUS:16344370256

VL - 52

SP - 1211

EP - 1215

JO - Scripta Materialia

JF - Scripta Materialia

SN - 1359-6462

IS - 12

ER -

Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

Abstract

Keywords

ASJC Scopus subject areas

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