Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

J. Chen; T. Sekiguchi; R. Xie; P. Ahmet; T. Chikyo; D. Yang; S. Ito; F. Yin

doi:10.1016/j.scriptamat.2005.03.010

Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

J. Chen, T. Sekiguchi, R. Xie, P. Ahmet, T. Chikyo, D. Yang, S. Ito, F. Yin

Research output: Contribution to journal › Article › peer-review

92 Citations (Scopus)

Abstract

Recombination activity of small-angle grain boundaries (SA GBs) in multicrystalline silicon (mc-Si) was studied by means of electron-beam-induced current (EBIC) technique. In the as-grown mc-Si, the EBIC contrasts of special Σ and random GBs were weak at both 300 and 100 K, whereas those of SA GBs were weak (<3%) at 300 K and strong (30-40%) at 100 K. In the contaminated mc-Si, SA GBs showed stronger EBIC contrast than Σ and R GBs at 300 K. It is indicated that SA GBs possess high density of shallow levels and are easily contaminated with Fe compared to other GBs.

Original language	English
Pages (from-to)	1211-1215
Number of pages	5
Journal	Scripta Materialia
Volume	52
Issue number	12
DOIs	https://doi.org/10.1016/j.scriptamat.2005.03.010
Publication status	Published - 2005 Jun 1
Externally published	Yes

Keywords

EBIC
EBSD
Elemental semiconductor
Grain boundary defects

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

Access to Document

10.1016/j.scriptamat.2005.03.010

Fingerprint Dive into the research topics of 'Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon'. Together they form a unique fingerprint.

Cite this

@article{e807723bdb7440d3b4008886c213dae1,

title = "Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon",

abstract = "Recombination activity of small-angle grain boundaries (SA GBs) in multicrystalline silicon (mc-Si) was studied by means of electron-beam-induced current (EBIC) technique. In the as-grown mc-Si, the EBIC contrasts of special Σ and random GBs were weak at both 300 and 100 K, whereas those of SA GBs were weak (<3%) at 300 K and strong (30-40%) at 100 K. In the contaminated mc-Si, SA GBs showed stronger EBIC contrast than Σ and R GBs at 300 K. It is indicated that SA GBs possess high density of shallow levels and are easily contaminated with Fe compared to other GBs.",

keywords = "EBIC, EBSD, Elemental semiconductor, Grain boundary defects",

author = "J. Chen and T. Sekiguchi and R. Xie and P. Ahmet and T. Chikyo and D. Yang and S. Ito and F. Yin",

year = "2005",

month = jun,

day = "1",

doi = "10.1016/j.scriptamat.2005.03.010",

language = "English",

volume = "52",

pages = "1211--1215",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Elsevier Limited",

number = "12",

}

TY - JOUR

T1 - Electron-beam-induced current study of small-angle grain boundaries in multicrystalline silicon

AU - Chen, J.

AU - Sekiguchi, T.

AU - Xie, R.

AU - Ahmet, P.

AU - Chikyo, T.

AU - Yang, D.

AU - Ito, S.

AU - Yin, F.

PY - 2005/6/1

Y1 - 2005/6/1

N2 - Recombination activity of small-angle grain boundaries (SA GBs) in multicrystalline silicon (mc-Si) was studied by means of electron-beam-induced current (EBIC) technique. In the as-grown mc-Si, the EBIC contrasts of special Σ and random GBs were weak at both 300 and 100 K, whereas those of SA GBs were weak (<3%) at 300 K and strong (30-40%) at 100 K. In the contaminated mc-Si, SA GBs showed stronger EBIC contrast than Σ and R GBs at 300 K. It is indicated that SA GBs possess high density of shallow levels and are easily contaminated with Fe compared to other GBs.

AB - Recombination activity of small-angle grain boundaries (SA GBs) in multicrystalline silicon (mc-Si) was studied by means of electron-beam-induced current (EBIC) technique. In the as-grown mc-Si, the EBIC contrasts of special Σ and random GBs were weak at both 300 and 100 K, whereas those of SA GBs were weak (<3%) at 300 K and strong (30-40%) at 100 K. In the contaminated mc-Si, SA GBs showed stronger EBIC contrast than Σ and R GBs at 300 K. It is indicated that SA GBs possess high density of shallow levels and are easily contaminated with Fe compared to other GBs.

KW - EBIC

KW - EBSD

KW - Elemental semiconductor

KW - Grain boundary defects

UR - http://www.scopus.com/inward/record.url?scp=16344370256&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=16344370256&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2005.03.010

DO - 10.1016/j.scriptamat.2005.03.010

M3 - Article

AN - SCOPUS:16344370256

VL - 52

SP - 1211

EP - 1215

JO - Scripta Materialia

JF - Scripta Materialia

SN - 1359-6462

IS - 12

ER -