Abstract
Recombination activity of small-angle grain boundaries (SA GBs) in multicrystalline silicon (mc-Si) was studied by means of electron-beam-induced current (EBIC) technique. In the as-grown mc-Si, the EBIC contrasts of special Σ and random GBs were weak at both 300 and 100 K, whereas those of SA GBs were weak (<3%) at 300 K and strong (30-40%) at 100 K. In the contaminated mc-Si, SA GBs showed stronger EBIC contrast than Σ and R GBs at 300 K. It is indicated that SA GBs possess high density of shallow levels and are easily contaminated with Fe compared to other GBs.
Original language | English |
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Pages (from-to) | 1211-1215 |
Number of pages | 5 |
Journal | Scripta Materialia |
Volume | 52 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2005 Jun |
Externally published | Yes |
Keywords
- EBIC
- EBSD
- Elemental semiconductor
- Grain boundary defects
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys