Electron-beam-induced current study of breakdown behavior of high-K gate MOSFETs

Jun Chen, Takashi Sekiguchi, Masami Takase, Naoki Fukata, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Keisaku Yamada, Toyohiro Chikyo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a dynamic and microscopic investigation of electrical stress induced defects in metal-oxide-semiconductor (MOS) devices with high-k gate dielectric by using electron-beam induced current (EBIC) technique. The correlation between time-dependent dielectric breakdown (TDDB) characteristics and EBIC imaging of breakdown sites are found. A systematic study was performed on pre-existing and electrical stress induced defects. Stress-induced defects are related to the formation of electron trapping defects. The origin of pre-existing defects is also discussed in terms of oxygen vacancy model with comparing different gate electrodes.

Original languageEnglish
Title of host publicationGettering and Defect Engineering in Semiconductor Technology XIII
Subtitle of host publicationGADEST 2009
PublisherTrans Tech Publications Ltd
Pages461-466
Number of pages6
ISBN (Print)3908451744, 9783908451747
DOIs
Publication statusPublished - 2009
Event13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009 - Berlin, Germany
Duration: 2009 Sep 262009 Oct 2

Publication series

NameSolid State Phenomena
Volume156-158
ISSN (Print)1012-0394

Conference

Conference13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009
CountryGermany
CityBerlin
Period09/9/2609/10/2

Keywords

  • Ebic
  • High-k gate dielectrics

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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