Electron beam induced current investigation of stress-induced leakage and breakdown processes in high-k stacks

Jun Chen, Takashi Sekiguchi, Naoki Fukata, Masami Takase, Toyohiro Chikyow, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Yasuo Nara, Keisaku Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report dynamic and microscopic investigations of electrical stress induced defects in a high-k/metal gate stack by electron beam induced current (EBIC). The correlation between dielectric breakdown and EBIC sites are reported. A systematic study was performed on pre-existing and electrical stress induced defects. These defects are successfully visualized. The origin of pre-existing defects is discussed, comparing different gate electrodes and their temperature-dependence.

Original languageEnglish
Title of host publication2009 IEEE International Reliability Physics Symposium, IRPS 2009
Pages333-338
Number of pages6
DOIs
Publication statusPublished - 2009 Nov 12
Externally publishedYes
Event2009 IEEE International Reliability Physics Symposium, IRPS 2009 - Montreal, QC, Canada
Duration: 2009 Apr 262009 Apr 30

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2009 IEEE International Reliability Physics Symposium, IRPS 2009
CountryCanada
CityMontreal, QC
Period09/4/2609/4/30

Keywords

  • CVS
  • EBIC
  • High-k

ASJC Scopus subject areas

  • Engineering(all)

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