Electron and ion energy controls in a radio frequency discharge plasma with silane

Kohgi Kato, Satoru Iizuka, Gautam Ganguly, Tohru Ikeda, Akihisa Matsuda, Noriyoshi Sato

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Electron and ion energy distribution functions are controlled in a radio-frequency (rf) discharge plasma with silane for production of hydrogenated amorphous silicon films. We apply the grid-bias method to an rf silane plasma in order to obtain a low electron-temperature (Te ≃ 0.2eV) and low ion-temperature (Ti ≃ 0.1eV) plasma. The ion beam energy is controlled by biasing the substrate. We find that the room temperature hole drift mobility is increased by two orders of magnitude compared to the conventional value at an ion beam energy between 23 eV and 24 eV.

Original languageEnglish
Pages (from-to)4547-4550
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number7 SUPPL. B
DOIs
Publication statusPublished - 1997 Jul

Keywords

  • Electron and ion temperature control
  • Grid-bias method
  • Hole drift mobility
  • Hydrogenated amorphous silicon
  • rf silane plasma

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Electron and ion energy controls in a radio frequency discharge plasma with silane'. Together they form a unique fingerprint.

  • Cite this