Electron and ion energy controls in a radio frequency discharge plasma with silane

Kohgi Kato; Satoru Iizuka; Gautam Ganguly; Tohru Ikeda; Akihisa Matsuda; Noriyoshi Sato

doi:10.1143/jjap.36.4547

Electron and ion energy controls in a radio frequency discharge plasma with silane

Kohgi Kato, Satoru Iizuka, Gautam Ganguly, Tohru Ikeda, Akihisa Matsuda, Noriyoshi Sato

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

Electron and ion energy distribution functions are controlled in a radio-frequency (rf) discharge plasma with silane for production of hydrogenated amorphous silicon films. We apply the grid-bias method to an rf silane plasma in order to obtain a low electron-temperature (T_e ≃ 0.2eV) and low ion-temperature (T_i ≃ 0.1eV) plasma. The ion beam energy is controlled by biasing the substrate. We find that the room temperature hole drift mobility is increased by two orders of magnitude compared to the conventional value at an ion beam energy between 23 eV and 24 eV.

Original language	English
Pages (from-to)	4547-4550
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	36
Issue number	7 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.36.4547
Publication status	Published - 1997 Jul
Externally published	Yes

Keywords

Electron and ion temperature control
Grid-bias method
Hole drift mobility
Hydrogenated amorphous silicon
rf silane plasma

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.36.4547

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title = "Electron and ion energy controls in a radio frequency discharge plasma with silane",

abstract = "Electron and ion energy distribution functions are controlled in a radio-frequency (rf) discharge plasma with silane for production of hydrogenated amorphous silicon films. We apply the grid-bias method to an rf silane plasma in order to obtain a low electron-temperature (Te ≃ 0.2eV) and low ion-temperature (Ti ≃ 0.1eV) plasma. The ion beam energy is controlled by biasing the substrate. We find that the room temperature hole drift mobility is increased by two orders of magnitude compared to the conventional value at an ion beam energy between 23 eV and 24 eV.",

keywords = "Electron and ion temperature control, Grid-bias method, Hole drift mobility, Hydrogenated amorphous silicon, rf silane plasma",

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year = "1997",

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language = "English",

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T1 - Electron and ion energy controls in a radio frequency discharge plasma with silane

AU - Kato, Kohgi

AU - Iizuka, Satoru

AU - Ganguly, Gautam

AU - Ikeda, Tohru

AU - Matsuda, Akihisa

AU - Sato, Noriyoshi

PY - 1997/7

Y1 - 1997/7

N2 - Electron and ion energy distribution functions are controlled in a radio-frequency (rf) discharge plasma with silane for production of hydrogenated amorphous silicon films. We apply the grid-bias method to an rf silane plasma in order to obtain a low electron-temperature (Te ≃ 0.2eV) and low ion-temperature (Ti ≃ 0.1eV) plasma. The ion beam energy is controlled by biasing the substrate. We find that the room temperature hole drift mobility is increased by two orders of magnitude compared to the conventional value at an ion beam energy between 23 eV and 24 eV.

AB - Electron and ion energy distribution functions are controlled in a radio-frequency (rf) discharge plasma with silane for production of hydrogenated amorphous silicon films. We apply the grid-bias method to an rf silane plasma in order to obtain a low electron-temperature (Te ≃ 0.2eV) and low ion-temperature (Ti ≃ 0.1eV) plasma. The ion beam energy is controlled by biasing the substrate. We find that the room temperature hole drift mobility is increased by two orders of magnitude compared to the conventional value at an ion beam energy between 23 eV and 24 eV.

KW - Electron and ion temperature control

KW - Grid-bias method

KW - Hole drift mobility

KW - Hydrogenated amorphous silicon

KW - rf silane plasma

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Electron and ion energy controls in a radio frequency discharge plasma with silane

Abstract

Keywords

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