Abstract
We have investigated the properties of InAs/AlSb/GaSb electron-hole proximity systems while focusing on the influence of the AlSb barrier between the two quantum wells. We have seen that for thin AlSb barriers there is a drop in mobility due to scattering of electrons by holes. We have also observed a series of secondary absorption peaks in cyclotron resonance spectra that are caused by interband Landau-level transitions.
| Original language | English |
|---|---|
| Pages (from-to) | 2448-2451 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 39 |
| Issue number | 4 B |
| DOIs | |
| Publication status | Published - 2000 Jan 1 |
| Externally published | Yes |
Keywords
- Coupled quantum wells
- Cyclotron resonance
- Electrical characterization
- InAs/AlSb
- InAs/GaSb
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Cite this
Roslund, J. H., Saito, K., Suzuki, K., Yamaguchi, H., & Hirayama, Y. (2000). Electron and hole proximity effects in the InAs/AlSb/GaSb system. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 39(4 B), 2448-2451. https://doi.org/10.1143/jjap.39.2448