Abstract
We have investigated the properties of InAs/AlSb/GaSb electron-hole proximity systems while focusing on the influence of the AlSb barrier between the two quantum wells. We have seen that for thin AlSb barriers there is a drop in mobility due to scattering of electrons by holes. We have also observed a series of secondary absorption peaks in cyclotron resonance spectra that are caused by interband Landau-level transitions.
Original language | English |
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Pages (from-to) | 2448-2451 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 39 |
Issue number | 4 B |
DOIs | |
Publication status | Published - 2000 |
Externally published | Yes |
Keywords
- Coupled quantum wells
- Cyclotron resonance
- Electrical characterization
- InAs/AlSb
- InAs/GaSb
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)