Electron and hole proximity effects in the InAs/AlSb/GaSb system

Jöran H. Roslund; Ken Saito; Kyoichi Suzuki; Hiroshi Yamaguchi; Yoshiro Hirayama

doi:10.1143/jjap.39.2448

Electron and hole proximity effects in the InAs/AlSb/GaSb system

Jöran H. Roslund, Ken Saito, Kyoichi Suzuki, Hiroshi Yamaguchi, Yoshiro Hirayama

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We have investigated the properties of InAs/AlSb/GaSb electron-hole proximity systems while focusing on the influence of the AlSb barrier between the two quantum wells. We have seen that for thin AlSb barriers there is a drop in mobility due to scattering of electrons by holes. We have also observed a series of secondary absorption peaks in cyclotron resonance spectra that are caused by interband Landau-level transitions.

Original language	English
Pages (from-to)	2448-2451
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	39
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.39.2448
Publication status	Published - 2000
Externally published	Yes

Keywords

Coupled quantum wells
Cyclotron resonance
Electrical characterization
InAs/AlSb
InAs/GaSb

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/jjap.39.2448

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abstract = "We have investigated the properties of InAs/AlSb/GaSb electron-hole proximity systems while focusing on the influence of the AlSb barrier between the two quantum wells. We have seen that for thin AlSb barriers there is a drop in mobility due to scattering of electrons by holes. We have also observed a series of secondary absorption peaks in cyclotron resonance spectra that are caused by interband Landau-level transitions.",

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T1 - Electron and hole proximity effects in the InAs/AlSb/GaSb system

AU - Roslund, Jöran H.

AU - Saito, Ken

AU - Suzuki, Kyoichi

AU - Yamaguchi, Hiroshi

AU - Hirayama, Yoshiro

PY - 2000

Y1 - 2000

N2 - We have investigated the properties of InAs/AlSb/GaSb electron-hole proximity systems while focusing on the influence of the AlSb barrier between the two quantum wells. We have seen that for thin AlSb barriers there is a drop in mobility due to scattering of electrons by holes. We have also observed a series of secondary absorption peaks in cyclotron resonance spectra that are caused by interband Landau-level transitions.

AB - We have investigated the properties of InAs/AlSb/GaSb electron-hole proximity systems while focusing on the influence of the AlSb barrier between the two quantum wells. We have seen that for thin AlSb barriers there is a drop in mobility due to scattering of electrons by holes. We have also observed a series of secondary absorption peaks in cyclotron resonance spectra that are caused by interband Landau-level transitions.

KW - Coupled quantum wells

KW - Cyclotron resonance

KW - Electrical characterization

KW - InAs/AlSb

KW - InAs/GaSb

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -

Electron and hole proximity effects in the InAs/AlSb/GaSb system

Abstract

Keywords

ASJC Scopus subject areas

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