Electron and hole injection via charge transfer at the topological insulator Bi2-xSbxTe3-ySey-organic molecule interface

Yoichi Tanabe, Khuong Kim Huynh, Ryo Nouchi, Satoshi Heguri, Gang Mu, Jingtao Xu, Hidekazu Shimotani, Katsumi Tanigaki

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

As a methodology for controlling the carrier transport of topological insulators (TIs), a flexible tuning in carrier number on the surface states (SSs) of three-dimensional TIs by surface modifications using organic molecules is described. The principle of the carrier tuning and its type conversion of TIs presented in this research are based on the charge transfer of holes or electrons at the TI-organic molecule interface. When 2,3,5,6-tetrafluoro-7,7,8, 8-tetracyanoquinodimethane (F4-TCNQ) as an electron acceptor or tetracyanoquinodimethane (TCNQ) as a donor is employed for n- and p-Bi 2-xSbxTe3-ySey (BSTS) single crystals, successful carrier conversion from n- to p-type and its reverse mode is demonstrated depending on the electron affinities of the molecules. The present method provides a nondestructive and efficient method for local tuning in carrier density of TIs and is useful for future applications.

Original languageEnglish
Pages (from-to)3533-3538
Number of pages6
JournalJournal of Physical Chemistry C
Volume118
Issue number7
DOIs
Publication statusPublished - 2014 Feb 20

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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