Electromechanical Properties of Monolayer Sn-Dichalcogenides

Le Xuan Bach, Vuong Van Thanh, Hoang Van Bao, Do Van Truong, Nguyen Tuan Hung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate electromechanical properties of monolayer SnX2 (X = Se, Te) with 1T structure as a function of charge doping using first-principles methods. We indicate that the monolayer SnSe2 shows a semiconductor-metal transition for the case of heavy electron doping, while SnTe2 retains the metallic properties under both electron and hole dopings. The actuation strain of SnX2 in the case of electron doping is significantly higher than those of hole doping. In addition, we also compute the ideal strength and ideal strain of the monolayer SnX2 under charge doping.

Original languageEnglish
Title of host publicationModern Mechanics and Applications - Select Proceedings of ICOMMA 2020
EditorsNguyen Tien Khiem, Tran Van Lien, Nguyen Xuan Hung
PublisherSpringer Science and Business Media Deutschland GmbH
Pages1113-1119
Number of pages7
ISBN (Print)9789811632389
DOIs
Publication statusPublished - 2022
EventInternational Conference on Modern Mechanics and Applications, ICOMMA 2020 - Ho Chi Minh City, Viet Nam
Duration: 2020 Dec 22020 Dec 4

Publication series

NameLecture Notes in Mechanical Engineering
ISSN (Print)2195-4356
ISSN (Electronic)2195-4364

Conference

ConferenceInternational Conference on Modern Mechanics and Applications, ICOMMA 2020
Country/TerritoryViet Nam
CityHo Chi Minh City
Period20/12/220/12/4

Keywords

  • Artificial muscles
  • Charge doping
  • Electromechanical
  • First-principles

ASJC Scopus subject areas

  • Automotive Engineering
  • Aerospace Engineering
  • Mechanical Engineering
  • Fluid Flow and Transfer Processes

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