Electromechanical coupling factors of single-domain 0.67Pb (Mg 1/3Nb2/3)O3-0.33 PbTiO3 single-crystal thin films

K. Wasa, S. Ito, K. Nakamura, T. Matsunaga, I. Kanno, T. Suzuki, H. Okino, T. Yamamoto, S. H. Seo, D. Y. Noh

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Thin films of single c -domain/single-crystal (1-x)Pb (Mg1/3 Nb2/3)O3-x PbTiO3 (PMN-PT) with x≃0.33 near a morphotropic boundary composition were heteroepitaxially grown on (110)SRO/(001)Pt/(001)MgO substrates. The heteroepitaxial growth was achieved by rf-magnetron sputtering at the substrate temperature of 600 °C. After the sputtering deposition, the substrates were rapidly cooled from 600 °C to room temperature by atmospheric air gas at a cooling rate of 100 °C/min. The rapid cooling process enhanced the heteroepitaxial growth of the single c -domain/single crystal PMN-PT thin films. Their electromechanical coupling factor kt measured by a resonance spectrum method was 45% at resonant frequency of 1.3 GHz with phase velocity of 5500 to 6000 ms for the film thickness of 2.3 μm. The d33 and d31 were 194 pCN and -104 pCN, respectively. The observed kdt, d33, and d 31 were almost the same to the bulk single-crystal values. The present PMN-PT thin films are applicable for a fabrication of GHz planar bulk acoustic wave transducers.

Original languageEnglish
Article number122903
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 2006 Mar 20

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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