Abstract
We investigate the electroluminescent characteristics of polysilane-based single-layer light-emitting diodes (LEDs) which employ poly (din-hexylsilane) (PDHS) or poly(di-n-butylsilane) (PDBS) (PDHS-LED and PDBS-LED, respectively), the PDHS-LED exhibits an electroluminescence (EL) identical to its photoluminescence (PL), which is composed of an emission only in the near-ultraviolet (NUV) region. By contrast, the PDBS-LED exhibits EL in both the visible and NUV regions. Although these two polysilanes differ only in terms of their substituent groups, their device characteristics vary considerably; the PDBS-LED exhibits a larger device current, inferior rectifying behavior, and a lower turn-on voltage than the PDHS-LED. This observation is inconsistent with predictions based on the hypothetical band diagrams of these two LEDs. We have demonstrated the fundamental EL characteristics of σ-conjugated one-dimensional Si chains by using PDHS, which has a highly ordered backbone conformation and negligible structural defects.
| Original language | English |
|---|---|
| Pages (from-to) | 221-225 |
| Number of pages | 5 |
| Journal | Synthetic Metals |
| Volume | 89 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1997 Sep |
| Externally published | Yes |
Keywords
- Dialkyl polysilanes
- Electroluminescence
- Silicon
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry