Electroluminescent characteristics of one-dimensional silicon chains in dialkyl polysilanes

Satoshi Hoshino; Hiroyuki Suzuki; Michiya Fujiki; Masao Morita; Nobuo Matsumoto

doi:10.1016/s0379-6779(97)81222-2

Electroluminescent characteristics of one-dimensional silicon chains in dialkyl polysilanes

Satoshi Hoshino, Hiroyuki Suzuki, Michiya Fujiki, Masao Morita, Nobuo Matsumoto

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We investigate the electroluminescent characteristics of polysilane-based single-layer light-emitting diodes (LEDs) which employ poly (din-hexylsilane) (PDHS) or poly(di-n-butylsilane) (PDBS) (PDHS-LED and PDBS-LED, respectively), the PDHS-LED exhibits an electroluminescence (EL) identical to its photoluminescence (PL), which is composed of an emission only in the near-ultraviolet (NUV) region. By contrast, the PDBS-LED exhibits EL in both the visible and NUV regions. Although these two polysilanes differ only in terms of their substituent groups, their device characteristics vary considerably; the PDBS-LED exhibits a larger device current, inferior rectifying behavior, and a lower turn-on voltage than the PDHS-LED. This observation is inconsistent with predictions based on the hypothetical band diagrams of these two LEDs. We have demonstrated the fundamental EL characteristics of σ-conjugated one-dimensional Si chains by using PDHS, which has a highly ordered backbone conformation and negligible structural defects.

Original language	English
Pages (from-to)	221-225
Number of pages	5
Journal	Synthetic Metals
Volume	89
Issue number	3
DOIs	https://doi.org/10.1016/s0379-6779(97)81222-2
Publication status	Published - 1997 Sep
Externally published	Yes

Keywords

Dialkyl polysilanes
Electroluminescence
Silicon

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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title = "Electroluminescent characteristics of one-dimensional silicon chains in dialkyl polysilanes",

abstract = "We investigate the electroluminescent characteristics of polysilane-based single-layer light-emitting diodes (LEDs) which employ poly (din-hexylsilane) (PDHS) or poly(di-n-butylsilane) (PDBS) (PDHS-LED and PDBS-LED, respectively), the PDHS-LED exhibits an electroluminescence (EL) identical to its photoluminescence (PL), which is composed of an emission only in the near-ultraviolet (NUV) region. By contrast, the PDBS-LED exhibits EL in both the visible and NUV regions. Although these two polysilanes differ only in terms of their substituent groups, their device characteristics vary considerably; the PDBS-LED exhibits a larger device current, inferior rectifying behavior, and a lower turn-on voltage than the PDHS-LED. This observation is inconsistent with predictions based on the hypothetical band diagrams of these two LEDs. We have demonstrated the fundamental EL characteristics of σ-conjugated one-dimensional Si chains by using PDHS, which has a highly ordered backbone conformation and negligible structural defects.",

keywords = "Dialkyl polysilanes, Electroluminescence, Silicon",

author = "Satoshi Hoshino and Hiroyuki Suzuki and Michiya Fujiki and Masao Morita and Nobuo Matsumoto",

year = "1997",

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doi = "10.1016/s0379-6779(97)81222-2",

language = "English",

volume = "89",

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journal = "Synthetic Metals",

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T1 - Electroluminescent characteristics of one-dimensional silicon chains in dialkyl polysilanes

AU - Hoshino, Satoshi

AU - Suzuki, Hiroyuki

AU - Fujiki, Michiya

AU - Morita, Masao

AU - Matsumoto, Nobuo

PY - 1997/9

Y1 - 1997/9

N2 - We investigate the electroluminescent characteristics of polysilane-based single-layer light-emitting diodes (LEDs) which employ poly (din-hexylsilane) (PDHS) or poly(di-n-butylsilane) (PDBS) (PDHS-LED and PDBS-LED, respectively), the PDHS-LED exhibits an electroluminescence (EL) identical to its photoluminescence (PL), which is composed of an emission only in the near-ultraviolet (NUV) region. By contrast, the PDBS-LED exhibits EL in both the visible and NUV regions. Although these two polysilanes differ only in terms of their substituent groups, their device characteristics vary considerably; the PDBS-LED exhibits a larger device current, inferior rectifying behavior, and a lower turn-on voltage than the PDHS-LED. This observation is inconsistent with predictions based on the hypothetical band diagrams of these two LEDs. We have demonstrated the fundamental EL characteristics of σ-conjugated one-dimensional Si chains by using PDHS, which has a highly ordered backbone conformation and negligible structural defects.

AB - We investigate the electroluminescent characteristics of polysilane-based single-layer light-emitting diodes (LEDs) which employ poly (din-hexylsilane) (PDHS) or poly(di-n-butylsilane) (PDBS) (PDHS-LED and PDBS-LED, respectively), the PDHS-LED exhibits an electroluminescence (EL) identical to its photoluminescence (PL), which is composed of an emission only in the near-ultraviolet (NUV) region. By contrast, the PDBS-LED exhibits EL in both the visible and NUV regions. Although these two polysilanes differ only in terms of their substituent groups, their device characteristics vary considerably; the PDBS-LED exhibits a larger device current, inferior rectifying behavior, and a lower turn-on voltage than the PDHS-LED. This observation is inconsistent with predictions based on the hypothetical band diagrams of these two LEDs. We have demonstrated the fundamental EL characteristics of σ-conjugated one-dimensional Si chains by using PDHS, which has a highly ordered backbone conformation and negligible structural defects.

KW - Dialkyl polysilanes

KW - Electroluminescence

KW - Silicon

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