Electrode-Geometry control of the formation of a conductive bridge in oxide resistance switching devices

Kohei Fujiwara, Takeshi Yajima, Yoshinobu Nakamura, Marcelo J. Rozenberg, Hidenori Takagi

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Control of the formation of conductive bridge between the metal electrodes in planar-type resistance switching device was attempted. We demonstrated in Pt/CuO/Pt devices that, using a triangular seed electrode for soft breakdown, the position and the size of the bridge can be controlled. The decrease in the size resulted in the drastic reduction of operation voltage and current to the same level as in capacitor- type stacked device. We argue that the planar-type device might have a certain advantage for future non - Volatile memory application.

Original languageEnglish
Article number081401
JournalApplied Physics Express
Volume2
Issue number8
DOIs
Publication statusPublished - 2009 Aug 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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