Electrode contact study for SiGe thin film operated at high temperature

Lionel Fabrice Houlet, Woosuck Shin, Maiko Nishibori, Noriya Izu, Toshio Itoh, Ichiro Matsubara

Research output: Contribution to journalArticlepeer-review

Abstract

A study on the electrode contact of the sputtered SiGe thin film is reported for application of devices working at high temperature. Surface morphological characterization with optical microscope and AFM (atomic force microscope) together with the electrical characterization by TLM measurements (transmission line method) were performed before and after aging at 500 °C for 24 h using various sputtered multilayer electrodes, Ti/Au/Ti, Ta/Pt/Ta and Ti/Pt/Ti, on 300-nm B-doped SiGe thin film deposited by magnetron sputtering and furnace crystallisation at high temperature. After aging at 500 °C for 24 h, the Ti/Au/Ti multilayer electrodes seriously degraded to be non-ohmic contact, showing rough surface morphology. The Ti/Pt/Ti metal layers showed the lowest specific contact, resistivity before and after aging, 1.46 × 10 -3 Ω cm 2 and 1.68 × 10 2 Ω cm 2 respectively.

Original languageEnglish
Pages (from-to)4999-5006
Number of pages8
JournalApplied Surface Science
Volume254
Issue number16
DOIs
Publication statusPublished - 2008 Jun 15
Externally publishedYes

Keywords

  • Adhesion layer
  • Contact
  • Electrode
  • High temperature
  • SiGe
  • Specific contact resistivity
  • Sputtering
  • TLM

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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