Electrochemistry on Si(100) in a hydrofluoric acid solution at cathodic potential regions

Yasuo Kimura, Jun Nemoto, Michio Niwano

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We have investigated the electrochemistry of Si(100) electrode surfaces under the negative bias condition in hydrofluoric acid (HF) solution using infrared absorption spectroscopy (IRAS) in the multiple internal reflection geometry (MIR-IRAS). We observe that immediately after the potential of -0.20 V is applied to a Si(100) electrode, dihydride (SiH2) and trihydride (SiH3) species increased their surface densities, while monohydride (SiH) decreases its density. When further applying a negative potential, no spectral changes were observed. We propose that the constrained bonds of surface hydride species are attacked by the hydrogen ion (H+) or the hydronium ion (H3O+) to generate more Si-H bonds in the vicinity of the surface, leading to an increase in the surface density of dihydride or trihydride species.

Original languageEnglish
Pages (from-to)107-110
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume96
Issue number2
DOIs
Publication statusPublished - 2002 Nov 1

Keywords

  • Electrochemical etching
  • Infrared absorption
  • Passivation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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