Electrochemistry on Si(100) in a hydrofluoric acid solution at cathodic potential regions

Yasuo Kimura; Jun Nemoto; Michio Niwano

doi:10.1016/S0921-5107(02)00300-8

Electrochemistry on Si(100) in a hydrofluoric acid solution at cathodic potential regions

Yasuo Kimura, Jun Nemoto, Michio Niwano

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Abstract

We have investigated the electrochemistry of Si(100) electrode surfaces under the negative bias condition in hydrofluoric acid (HF) solution using infrared absorption spectroscopy (IRAS) in the multiple internal reflection geometry (MIR-IRAS). We observe that immediately after the potential of -0.20 V is applied to a Si(100) electrode, dihydride (SiH₂) and trihydride (SiH₃) species increased their surface densities, while monohydride (SiH) decreases its density. When further applying a negative potential, no spectral changes were observed. We propose that the constrained bonds of surface hydride species are attacked by the hydrogen ion (H⁺) or the hydronium ion (H₃O⁺) to generate more Si-H bonds in the vicinity of the surface, leading to an increase in the surface density of dihydride or trihydride species.

Original language	English
Pages (from-to)	107-110
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	96
Issue number	2
DOIs	https://doi.org/10.1016/S0921-5107(02)00300-8
Publication status	Published - 2002 Nov 1

Keywords

Electrochemical etching
Infrared absorption
Passivation

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{a53ebdcd3f3e47199a5d3317cc0f4aea,

title = "Electrochemistry on Si(100) in a hydrofluoric acid solution at cathodic potential regions",

abstract = "We have investigated the electrochemistry of Si(100) electrode surfaces under the negative bias condition in hydrofluoric acid (HF) solution using infrared absorption spectroscopy (IRAS) in the multiple internal reflection geometry (MIR-IRAS). We observe that immediately after the potential of -0.20 V is applied to a Si(100) electrode, dihydride (SiH2) and trihydride (SiH3) species increased their surface densities, while monohydride (SiH) decreases its density. When further applying a negative potential, no spectral changes were observed. We propose that the constrained bonds of surface hydride species are attacked by the hydrogen ion (H+) or the hydronium ion (H3O+) to generate more Si-H bonds in the vicinity of the surface, leading to an increase in the surface density of dihydride or trihydride species.",

keywords = "Electrochemical etching, Infrared absorption, Passivation",

author = "Yasuo Kimura and Jun Nemoto and Michio Niwano",

year = "2002",

month = nov,

day = "1",

doi = "10.1016/S0921-5107(02)00300-8",

language = "English",

volume = "96",

pages = "107--110",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "2",

}

TY - JOUR

T1 - Electrochemistry on Si(100) in a hydrofluoric acid solution at cathodic potential regions

AU - Kimura, Yasuo

AU - Nemoto, Jun

AU - Niwano, Michio

PY - 2002/11/1

Y1 - 2002/11/1

N2 - We have investigated the electrochemistry of Si(100) electrode surfaces under the negative bias condition in hydrofluoric acid (HF) solution using infrared absorption spectroscopy (IRAS) in the multiple internal reflection geometry (MIR-IRAS). We observe that immediately after the potential of -0.20 V is applied to a Si(100) electrode, dihydride (SiH2) and trihydride (SiH3) species increased their surface densities, while monohydride (SiH) decreases its density. When further applying a negative potential, no spectral changes were observed. We propose that the constrained bonds of surface hydride species are attacked by the hydrogen ion (H+) or the hydronium ion (H3O+) to generate more Si-H bonds in the vicinity of the surface, leading to an increase in the surface density of dihydride or trihydride species.

AB - We have investigated the electrochemistry of Si(100) electrode surfaces under the negative bias condition in hydrofluoric acid (HF) solution using infrared absorption spectroscopy (IRAS) in the multiple internal reflection geometry (MIR-IRAS). We observe that immediately after the potential of -0.20 V is applied to a Si(100) electrode, dihydride (SiH2) and trihydride (SiH3) species increased their surface densities, while monohydride (SiH) decreases its density. When further applying a negative potential, no spectral changes were observed. We propose that the constrained bonds of surface hydride species are attacked by the hydrogen ion (H+) or the hydronium ion (H3O+) to generate more Si-H bonds in the vicinity of the surface, leading to an increase in the surface density of dihydride or trihydride species.

KW - Electrochemical etching

KW - Infrared absorption

KW - Passivation

UR - http://www.scopus.com/inward/record.url?scp=0036839398&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036839398&partnerID=8YFLogxK

U2 - 10.1016/S0921-5107(02)00300-8

DO - 10.1016/S0921-5107(02)00300-8

M3 - Article

AN - SCOPUS:0036839398

VL - 96

SP - 107

EP - 110

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 2

ER -