Abstract
From AFM observations, we found that atomic flattening of Si(111) surfaces in 40% NH4F solutions was accelerated by removing oxygen using a chemical deoxygenator. Furthermore, the surfaces became flatter by treatment in solutions without oxygen. The dissolution of Si in 40% NH4F solutions can be electrochemically monitored as anodic currents. From the measurements of the anodic currents, we found that the dissolution rate of Si was enhanced by removing oxygen from the solution. These results suggest that oxygen blocks the reactive sites on Si from the attacks of etching species in solution. At low temperature and in the absence of oxygen, although the morphological change was slow, the surface became very flat.
Original language | English |
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Pages (from-to) | 146-150 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 130-132 |
DOIs | |
Publication status | Published - 1998 |
Externally published | Yes |
Event | Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn Duration: 1997 Oct 27 → 1997 Oct 30 |
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films