Electrochemical study of atomically flattening process of silicon surface in 40% NH4F solution

Hirokazu Fukidome, Michio Matsumura

Research output: Contribution to journalConference articlepeer-review

42 Citations (Scopus)

Abstract

From AFM observations, we found that atomic flattening of Si(111) surfaces in 40% NH4F solutions was accelerated by removing oxygen using a chemical deoxygenator. Furthermore, the surfaces became flatter by treatment in solutions without oxygen. The dissolution of Si in 40% NH4F solutions can be electrochemically monitored as anodic currents. From the measurements of the anodic currents, we found that the dissolution rate of Si was enhanced by removing oxygen from the solution. These results suggest that oxygen blocks the reactive sites on Si from the attacks of etching species in solution. At low temperature and in the absence of oxygen, although the morphological change was slow, the surface became very flat.

Original languageEnglish
Pages (from-to)146-150
Number of pages5
JournalApplied Surface Science
Volume130-132
DOIs
Publication statusPublished - 1998 Jan 1
Externally publishedYes
EventProceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn
Duration: 1997 Oct 271997 Oct 30

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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