Electrochemical study of atomically flattening process of silicon surface in 40% NH4F solution

Hirokazu Fukidome; Michio Matsumura

doi:10.1016/S0169-4332(98)00041-5

Electrochemical study of atomically flattening process of silicon surface in 40% NH₄F solution

Hirokazu Fukidome, Michio Matsumura

Research output: Contribution to journal › Conference article › peer-review

42 Citations (Scopus)

Abstract

From AFM observations, we found that atomic flattening of Si(111) surfaces in 40% NH₄F solutions was accelerated by removing oxygen using a chemical deoxygenator. Furthermore, the surfaces became flatter by treatment in solutions without oxygen. The dissolution of Si in 40% NH₄F solutions can be electrochemically monitored as anodic currents. From the measurements of the anodic currents, we found that the dissolution rate of Si was enhanced by removing oxygen from the solution. These results suggest that oxygen blocks the reactive sites on Si from the attacks of etching species in solution. At low temperature and in the absence of oxygen, although the morphological change was slow, the surface became very flat.

Original language	English
Pages (from-to)	146-150
Number of pages	5
Journal	Applied Surface Science
Volume	130-132
DOIs	https://doi.org/10.1016/S0169-4332(98)00041-5
Publication status	Published - 1998 Jan 1
Externally published	Yes
Event	Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn Duration: 1997 Oct 27 → 1997 Oct 30

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Electrochemical study of atomically flattening process of silicon surface in 40% NH4F solution",

abstract = "From AFM observations, we found that atomic flattening of Si(111) surfaces in 40% NH4F solutions was accelerated by removing oxygen using a chemical deoxygenator. Furthermore, the surfaces became flatter by treatment in solutions without oxygen. The dissolution of Si in 40% NH4F solutions can be electrochemically monitored as anodic currents. From the measurements of the anodic currents, we found that the dissolution rate of Si was enhanced by removing oxygen from the solution. These results suggest that oxygen blocks the reactive sites on Si from the attacks of etching species in solution. At low temperature and in the absence of oxygen, although the morphological change was slow, the surface became very flat.",

author = "Hirokazu Fukidome and Michio Matsumura",

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note = "Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 ; Conference date: 27-10-1997 Through 30-10-1997",

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T1 - Electrochemical study of atomically flattening process of silicon surface in 40% NH4F solution

AU - Fukidome, Hirokazu

AU - Matsumura, Michio

PY - 1998/1/1

Y1 - 1998/1/1

N2 - From AFM observations, we found that atomic flattening of Si(111) surfaces in 40% NH4F solutions was accelerated by removing oxygen using a chemical deoxygenator. Furthermore, the surfaces became flatter by treatment in solutions without oxygen. The dissolution of Si in 40% NH4F solutions can be electrochemically monitored as anodic currents. From the measurements of the anodic currents, we found that the dissolution rate of Si was enhanced by removing oxygen from the solution. These results suggest that oxygen blocks the reactive sites on Si from the attacks of etching species in solution. At low temperature and in the absence of oxygen, although the morphological change was slow, the surface became very flat.

AB - From AFM observations, we found that atomic flattening of Si(111) surfaces in 40% NH4F solutions was accelerated by removing oxygen using a chemical deoxygenator. Furthermore, the surfaces became flatter by treatment in solutions without oxygen. The dissolution of Si in 40% NH4F solutions can be electrochemically monitored as anodic currents. From the measurements of the anodic currents, we found that the dissolution rate of Si was enhanced by removing oxygen from the solution. These results suggest that oxygen blocks the reactive sites on Si from the attacks of etching species in solution. At low temperature and in the absence of oxygen, although the morphological change was slow, the surface became very flat.

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