Electrochemical etching in wet-chemical gate recess for InAlAs/InGaAs heterojunction FETs

Dong Xu, Takatomo Enoki, Tetsuya Suemitsu, Yasunobu Ishii

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

When resist openings are employed to monitor the drain current of InP-based heterojunction FETs during wet-chemical gate recess, etching rates for InGaAs and InAlAs can be significantly modified by the exposure of the surface metal on the non-alloy ohmic electrodes to citric-acid-based etchants. Surface metal of Ni enhances the recess etching rate to a degree that is much higher than that in its absence. With this non-selective citric-acid-based etchant, the presence of Pt surface metal, however, leads to a preferential etching of InGaAs over InAlAs. This behavior of selective etching is attributed to the excess oxidation of InAlAs induced by the high electrode potential of Pt via electrochemical effects. This investigation discloses that the selection of the surface metal that lies beneath the resist openings can be very important if gate recess grooves with desired shapes are to be fabricated.

Original languageEnglish
Pages (from-to)797-800
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1998 Dec 1
Externally publishedYes
EventProceedings of the 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Jpn
Duration: 1998 May 111998 May 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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