Electrochemical behavior of silicon (IV) Ion in BaF2-CaF2-SiO2 melts at 1573K

Yuejiao Hu, Xin Wang, Jiusan Xiao, Jungang Hou, Shuqiang Jiao, Komin Shu

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17 Citations (Scopus)

Abstract

Studies were performed to investigate the cathodic behavior of silicon (IV) ion in a BaF2-CaF2-SiO2 melt at a temperature of 1573 K. The results obtained show that the silicon (IV) ion was reduced through a single-step from Si4+ + 4e = Si, which was an irreversible process with diffusion-controlled mass transfer. The diffusion coefficient (D) for the reduction process of silicon (IV) ion in BaF2-CaF 2-SiO2 melt was 9.76×10-5 cm2 s-1, at 1573 K. Furthermore, galvanostatic electrolysis performed on a molybdenum electrode, which further presents the feasibility of electro-depositing silicon in molten BaF2-CaF2-SiO 2 system.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume160
Issue number3
DOIs
Publication statusPublished - 2013 Apr 2
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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