Electrically induced ferromagnetism at room temperature in cobalt-doped titanium dioxide

Y. Yamada, K. Ueno, T. Fukumura, H. T. Yuan, H. Shimotani, Y. Iwasa, L. Gu, S. Tsukimoto, Y. Ikuhara, M. Kawasaki

Research output: Contribution to journalArticlepeer-review

409 Citations (Scopus)


The electric field effect in ferromagnetic semiconductors enables switching of the magnetization, which is a key technology for spintronic applications. We demonstrated electric field-induced ferromagnetism at room temperature in a magnetic oxide semiconductor, (Ti,Co)O2, by means of electric double-layer gating with high-density electron accumulation (>1014 per square centimeter). By applying a gate voltage of a few volts, a low-carrier paramagnetic state was transformed into a high-carrier ferromagnetic state, thereby revealing the considerable role of electron carriers in high-temperature ferromagnetism and demonstrating a route to room-temperature semiconductor spintronics.

Original languageEnglish
Pages (from-to)1065-1067
Number of pages3
Issue number6033
Publication statusPublished - 2011 May 27
Externally publishedYes

ASJC Scopus subject areas

  • General


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