Electrically biased photoreflectance study of cubic GaN/GaAs(001) heterointerface

Ryuji Katayama, Masayuki Kuroda, Kentaro Onabe, Yasuhiro Shiraki

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)


Electrically-biased photoreflectance (PR) spectrum measurements were carried out for the Au/cubicAlGaN/GaN/n-GaAs(001) Schottky diode structure. The built-in electric-field strength at the GaAs side of the GaN/GaAs interface and its dependence on the external-bias voltage, evaluated by the Fast Fourier Transform analysis of the Franz-Keldysh oscillation in the PR spectrum, suggest the formation of the hole channel in the vicinity of the GaN/GaAs heterointerface even under the zero-biased condition. The bandlineup and band-bending at this heterointerface were discussed in relation to the parallel conduction phenomena observed in the Hall effect and photoconductivity measurements.

Original languageEnglish
Pages (from-to)2597-2601
Number of pages5
JournalPhysica Status Solidi C: Conferences
Issue number7
Publication statusPublished - 2003
Externally publishedYes
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

ASJC Scopus subject areas

  • Condensed Matter Physics


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