Electrically-biased photoreflectance (PR) spectrum measurements were carried out for the Au/cubicAlGaN/GaN/n-GaAs(001) Schottky diode structure. The built-in electric-field strength at the GaAs side of the GaN/GaAs interface and its dependence on the external-bias voltage, evaluated by the Fast Fourier Transform analysis of the Franz-Keldysh oscillation in the PR spectrum, suggest the formation of the hole channel in the vicinity of the GaN/GaAs heterointerface even under the zero-biased condition. The bandlineup and band-bending at this heterointerface were discussed in relation to the parallel conduction phenomena observed in the Hall effect and photoconductivity measurements.
|Number of pages||5|
|Journal||Physica Status Solidi C: Conferences|
|Publication status||Published - 2003 Dec 1|
|Event||5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan|
Duration: 2003 May 25 → 2003 May 30
ASJC Scopus subject areas
- Condensed Matter Physics