Electrical Transport Properties of Nb and Ga Double Substituted Fe2VAl Heusler Compounds

A. I. Voronin, I. A. Serhiienko, Ye Zh Ashim, V. L. Kurichenko, A. P. Novitskii, T. M. Inerbaev, R. Umetsu, V. V. Khovaylo

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Abstract: In this work the results of studying the electrical transport properties of Fe2V1 – xNbxAl1 – yGay (0.1 ≤ x ≤ 0.2 and 0.1 ≤ y ≤ 0.2) are presented. The specimens were fabricated using conventional arc-melting method followed by ball milling and spark plasma sintering. It was shown that dual-site substitution approach may lead to a more noticeable changes in the Seebeck coefficient and the electrical resistivity comparing to single-site substitution. Since such substitution can be assumed as isovalent one, the evolution of the electrical transport properties was mainly attributed to the changes in the band gap and charge carrier mobility values. To testify applicability of computational methods on these samples we have used well-known density functional theory and Boltzmann transport equation solving on one of the samples.

Original languageEnglish
Pages (from-to)1856-1859
Number of pages4
JournalSemiconductors
Volume53
Issue number13
DOIs
Publication statusPublished - 2019 Dec 1

Keywords

  • Heusler compounds
  • spark plasma sintering
  • thermoelectric materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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