Electrical transport properties of isolated carbon nanotube/Si heterojunction Schottky diodes

T. Uchino, F. Shimpo, T. Kawashima, G. N. Ayre, D. C. Smith, C. H. De Groot, P. Ashburn

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

A detailed study of the electrical transport properties of Pd contacted carbon nanotube (CNT)/Si heterojunctions is presented. The CNT with a diameter ranging from 1.2 to 2.0 nm on n-type Si substrates showed rectifying behavior with the ideality factor of 1.1-2.2 and turn on voltage of 0.05-0.34 V. The current-voltage characteristics of the CNT/n+-Si diodes were investigated in the temperature range from 50 to 300 K. The transition from thermionic emission to tunneling process was seen in the forward current around 150 K and the Schottky barrier height at Pd/CNT interface is estimated to be 0.3-0.5 eV.

Original languageEnglish
Article number193111
JournalApplied Physics Letters
Volume103
Issue number19
DOIs
Publication statusPublished - 2013 Nov 4

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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