Electrical transport properties and spin injection in Co 2FeAl0.5Si0.5/GaAs junctions

Tatsuya Saito; Nobuki Tezuka; Satoshi Sugimoto

doi:10.1109/TMAG.2011.2153189

Electrical transport properties and spin injection in Co ₂FeAl_0.5Si_0.5/GaAs junctions

Tatsuya Saito, Nobuki Tezuka, Satoshi Sugimoto

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We investigated the electrical transport properties in Co ₂FeAl_0.5Si_0.5 (CFAS)/GaAs junctions. From current density-voltage characteristics, the formation of a schottky tunnel barrier in the CFAS/GaAs interface was indicated. Moreover, junction resistance of 2× 10^-9 Ω·m² which is adequate for high magnetoresistance ratio attributable to high spin injection efficiency was obtained. Comparing the bias dependencies of conductance with samples, which CFAS ordering is lower, indicated that L2₁ ordered CFAS contributes to electrical transport. Finally, the spin injection signal was observed with 3-terminal Hanle measurement, and spin relaxation time was estimated to be 380 ps at 5 K.

Original language	English
Article number	6027836
Pages (from-to)	2447-2450
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	47
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2011.2153189
Publication status	Published - 2011 Oct

Keywords

full-Heusler alloy
spin injection
spintronics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TMAG.2011.2153189

Cite this

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title = "Electrical transport properties and spin injection in Co 2FeAl0.5Si0.5/GaAs junctions",

abstract = "We investigated the electrical transport properties in Co 2FeAl0.5Si0.5 (CFAS)/GaAs junctions. From current density-voltage characteristics, the formation of a schottky tunnel barrier in the CFAS/GaAs interface was indicated. Moreover, junction resistance of 2× 10-9 Ω·m2 which is adequate for high magnetoresistance ratio attributable to high spin injection efficiency was obtained. Comparing the bias dependencies of conductance with samples, which CFAS ordering is lower, indicated that L21 ordered CFAS contributes to electrical transport. Finally, the spin injection signal was observed with 3-terminal Hanle measurement, and spin relaxation time was estimated to be 380 ps at 5 K.",

keywords = "full-Heusler alloy, spin injection, spintronics",

author = "Tatsuya Saito and Nobuki Tezuka and Satoshi Sugimoto",

note = "Funding Information: This work was supported in part by Asahi glass foundation and Grant-in-Aid for Scientific Research (B) (22360002), and by Strategic Japanese-German Joint Research Program “ASPI-MATT” from JST.",

year = "2011",

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doi = "10.1109/TMAG.2011.2153189",

language = "English",

volume = "47",

pages = "2447--2450",

journal = "IEEE Transactions on Magnetics",

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T1 - Electrical transport properties and spin injection in Co 2FeAl0.5Si0.5/GaAs junctions

AU - Saito, Tatsuya

AU - Tezuka, Nobuki

AU - Sugimoto, Satoshi

N1 - Funding Information: This work was supported in part by Asahi glass foundation and Grant-in-Aid for Scientific Research (B) (22360002), and by Strategic Japanese-German Joint Research Program “ASPI-MATT” from JST.

PY - 2011/10

Y1 - 2011/10

N2 - We investigated the electrical transport properties in Co 2FeAl0.5Si0.5 (CFAS)/GaAs junctions. From current density-voltage characteristics, the formation of a schottky tunnel barrier in the CFAS/GaAs interface was indicated. Moreover, junction resistance of 2× 10-9 Ω·m2 which is adequate for high magnetoresistance ratio attributable to high spin injection efficiency was obtained. Comparing the bias dependencies of conductance with samples, which CFAS ordering is lower, indicated that L21 ordered CFAS contributes to electrical transport. Finally, the spin injection signal was observed with 3-terminal Hanle measurement, and spin relaxation time was estimated to be 380 ps at 5 K.

AB - We investigated the electrical transport properties in Co 2FeAl0.5Si0.5 (CFAS)/GaAs junctions. From current density-voltage characteristics, the formation of a schottky tunnel barrier in the CFAS/GaAs interface was indicated. Moreover, junction resistance of 2× 10-9 Ω·m2 which is adequate for high magnetoresistance ratio attributable to high spin injection efficiency was obtained. Comparing the bias dependencies of conductance with samples, which CFAS ordering is lower, indicated that L21 ordered CFAS contributes to electrical transport. Finally, the spin injection signal was observed with 3-terminal Hanle measurement, and spin relaxation time was estimated to be 380 ps at 5 K.

KW - full-Heusler alloy

KW - spin injection

KW - spintronics

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