Electrical transport in SixGe1-x bulk alloys

T. R. Mchedlidze, I. Yonenaga, A. Matsui, K. Sumino

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

The carrier transport in monocrystalline SixGe1-x bulk alloys with X=0.03 and X=0.23 and in polycrystalline alloys with 0.12≤X≤0.5 grown by the Czochralski method was investigated by means of Hall effect and resistivity measurements. The defect arrangement in the samples was observed by preferential etching. With no impurity deliberately added grown alloys reveal acceptor properties with carrier concentration increasing from 3 × 1014 cm-3 for X=0.03 to 1.35 × 1015 cm-3 for X=0.5. In monocrystalline samples the acceptor level is located near to Ev+0.14eV. Hall mobility in the monocrystalline samples is affected by alloy scattering even at high temperatures. Grain boundaries strongly lower Hall mobility in the polycrystalline samples.

Original languageEnglish
Pages (from-to)353-358
Number of pages6
JournalMaterials Science Forum
Volume196-201
Issue numberpt 1
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
Duration: 1995 Jul 231995 Jul 28

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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