Electrical transport characteristics of Bi2Sr2CaCu2O8+δ stacked junctions with control of the carrier density

Kunihiro Inomata; Takeshi Kawae; Sang Jae Kim; Kensuke Nakajima; Tsutomu Yamashita; Shigeo Sato; Koji Nakajima; Takeshi Hatano

doi:10.1088/0953-2048/16/12/009

Electrical transport characteristics of Bi₂Sr₂CaCu₂O_8+δ stacked junctions with control of the carrier density

Kunihiro Inomata, Takeshi Kawae, Sang Jae Kim, Kensuke Nakajima, Tsutomu Yamashita, Shigeo Sato, Koji Nakajima, Takeshi Hatano

Information Devices Division

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

The control of the critical current density (J_c) and the junction resistance (R_N) along the c-axis of intrinsic Josephson junctions (IJJs) on a high-T_c superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of J_c, R_N and the carrier density in Bi₂Sr₂CaCu₂O_8+δ whiskers by changing the carrier density with an annealing process. We determined the electrical transport characteristics of the IJJs. As a result, the J_c increased, and the R_N decreased systematically when the carrier density increased. The values of J_c and R_N could be controlled by a change in the carrier density.

Original language	English
Pages (from-to)	1365-1367
Number of pages	3
Journal	Superconductor Science and Technology
Volume	16
Issue number	12
DOIs	https://doi.org/10.1088/0953-2048/16/12/009
Publication status	Published - 2003 Dec 1
Event	ISEC 2003, International Superconducting Electronics Conference - Sydney,NSW, Australia Duration: 2003 Jul 7 → 2003 Jul 11

ASJC Scopus subject areas

Ceramics and Composites
Condensed Matter Physics
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0953-2048/16/12/009

Cite this

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title = "Electrical transport characteristics of Bi2Sr2CaCu2O8+δ stacked junctions with control of the carrier density",

abstract = "The control of the critical current density (Jc) and the junction resistance (RN) along the c-axis of intrinsic Josephson junctions (IJJs) on a high-Tc superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of Jc, RN and the carrier density in Bi2Sr2CaCu2O8+δ whiskers by changing the carrier density with an annealing process. We determined the electrical transport characteristics of the IJJs. As a result, the Jc increased, and the RN decreased systematically when the carrier density increased. The values of Jc and RN could be controlled by a change in the carrier density.",

author = "Kunihiro Inomata and Takeshi Kawae and Kim, {Sang Jae} and Kensuke Nakajima and Tsutomu Yamashita and Shigeo Sato and Koji Nakajima and Takeshi Hatano",

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TY - JOUR

T1 - Electrical transport characteristics of Bi2Sr2CaCu2O8+δ stacked junctions with control of the carrier density

AU - Inomata, Kunihiro

AU - Kawae, Takeshi

AU - Kim, Sang Jae

AU - Nakajima, Kensuke

AU - Yamashita, Tsutomu

AU - Sato, Shigeo

AU - Nakajima, Koji

AU - Hatano, Takeshi

PY - 2003/12/1

Y1 - 2003/12/1

N2 - The control of the critical current density (Jc) and the junction resistance (RN) along the c-axis of intrinsic Josephson junctions (IJJs) on a high-Tc superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of Jc, RN and the carrier density in Bi2Sr2CaCu2O8+δ whiskers by changing the carrier density with an annealing process. We determined the electrical transport characteristics of the IJJs. As a result, the Jc increased, and the RN decreased systematically when the carrier density increased. The values of Jc and RN could be controlled by a change in the carrier density.

AB - The control of the critical current density (Jc) and the junction resistance (RN) along the c-axis of intrinsic Josephson junctions (IJJs) on a high-Tc superconductor is very important for applying the IJJs to electronic devices. For controlling these junction parameters, we have clarified the relationship of Jc, RN and the carrier density in Bi2Sr2CaCu2O8+δ whiskers by changing the carrier density with an annealing process. We determined the electrical transport characteristics of the IJJs. As a result, the Jc increased, and the RN decreased systematically when the carrier density increased. The values of Jc and RN could be controlled by a change in the carrier density.

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EP - 1367

JO - Superconductor Science and Technology

JF - Superconductor Science and Technology

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T2 - ISEC 2003, International Superconducting Electronics Conference

Y2 - 7 July 2003 through 11 July 2003

ER -

Electrical transport characteristics of Bi₂Sr₂CaCu₂O_8+δ stacked junctions with control of the carrier density

Abstract

ASJC Scopus subject areas

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