Electrical spin manipulation with Al2O3 gate insulator in InGaAs based mesoscopic ring arrays

Research output: Contribution to journalConference article

Abstract

We demonstrated gate controlled spin precession in InGaAs based mesoscopic ring arrays. We applied two different gate insulators, Al2O3 and SiO2, to compare the gate sensitivity for the spin precession. Al'tshuler-AronovSpivak (AAS) oscillations were clearly observed and the resistance amplitude of AAS oscillations at zero magnetic field depends on the gate voltage. The spin precession angle of 2 π is achieved by the gate voltage of 5.4 V for SiO2 gate insulator and 0.6 V for Al2O3 gate insulator. Al2O3 gate is effective for electrical spin manipulation and enables the spin manipulation in a wide range.

Original languageEnglish
Pages (from-to)1317-1320
Number of pages4
JournalPhysics Procedia
Volume3
Issue number2
DOIs
Publication statusPublished - 2010 Jan 31
Event14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 - Senda, Japan
Duration: 2009 Jul 132009 Jul 17

Keywords

  • AlO gate insulator
  • Ring array structure
  • Spin interference device
  • Spin manipulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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