Electrical spin manipulation with Al2O3 gate insulator in InGaAs based mesoscopic ring arrays

Jun Takagi; Makoto Kohda; Junsaku Nitta

doi:10.1016/j.phpro.2010.01.183

Electrical spin manipulation with Al₂O₃ gate insulator in InGaAs based mesoscopic ring arrays

Jun Takagi, Makoto Kohda, Junsaku Nitta

ENG - Materials Science

Research output: Contribution to journal › Conference article › peer-review

Abstract

We demonstrated gate controlled spin precession in InGaAs based mesoscopic ring arrays. We applied two different gate insulators, Al₂O₃ and SiO₂, to compare the gate sensitivity for the spin precession. Al'tshuler-AronovSpivak (AAS) oscillations were clearly observed and the resistance amplitude of AAS oscillations at zero magnetic field depends on the gate voltage. The spin precession angle of 2 π is achieved by the gate voltage of 5.4 V for SiO₂ gate insulator and 0.6 V for Al₂O₃ gate insulator. Al₂O₃ gate is effective for electrical spin manipulation and enables the spin manipulation in a wide range.

Original language	English
Pages (from-to)	1317-1320
Number of pages	4
Journal	Physics Procedia
Volume	3
Issue number	2
DOIs	https://doi.org/10.1016/j.phpro.2010.01.183
Publication status	Published - 2010 Jan 31
Event	14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 - Senda, Japan Duration: 2009 Jul 13 → 2009 Jul 17

Keywords

AlO gate insulator
Ring array structure
Spin interference device
Spin manipulation

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1016/j.phpro.2010.01.183

Cite this

@article{0977388b3db24c5098e6ce9e222a352a,

title = "Electrical spin manipulation with Al2O3 gate insulator in InGaAs based mesoscopic ring arrays",

abstract = "We demonstrated gate controlled spin precession in InGaAs based mesoscopic ring arrays. We applied two different gate insulators, Al2O3 and SiO2, to compare the gate sensitivity for the spin precession. Al'tshuler-AronovSpivak (AAS) oscillations were clearly observed and the resistance amplitude of AAS oscillations at zero magnetic field depends on the gate voltage. The spin precession angle of 2 π is achieved by the gate voltage of 5.4 V for SiO2 gate insulator and 0.6 V for Al2O3 gate insulator. Al2O3 gate is effective for electrical spin manipulation and enables the spin manipulation in a wide range.",

keywords = "AlO gate insulator, Ring array structure, Spin interference device, Spin manipulation",

author = "Jun Takagi and Makoto Kohda and Junsaku Nitta",

note = "Funding Information: This work was partly supported by Grants-in-Aids from JSPS, MEXT, and SCOPE. Also this work was partly supported by Global COE Program “Materials Integration, Tohoku University”. J. N. acknowledges support of the Mitsubishi Foundation. This work was partly carried out at the Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University.; 14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 ; Conference date: 13-07-2009 Through 17-07-2009",

year = "2010",

month = jan,

day = "31",

doi = "10.1016/j.phpro.2010.01.183",

language = "English",

volume = "3",

pages = "1317--1320",

journal = "Physics Procedia",

issn = "1875-3892",

publisher = "Elsevier BV",

number = "2",

}

TY - JOUR

T1 - Electrical spin manipulation with Al2O3 gate insulator in InGaAs based mesoscopic ring arrays

AU - Takagi, Jun

AU - Kohda, Makoto

AU - Nitta, Junsaku

N1 - Funding Information: This work was partly supported by Grants-in-Aids from JSPS, MEXT, and SCOPE. Also this work was partly supported by Global COE Program “Materials Integration, Tohoku University”. J. N. acknowledges support of the Mitsubishi Foundation. This work was partly carried out at the Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University.

PY - 2010/1/31

Y1 - 2010/1/31

N2 - We demonstrated gate controlled spin precession in InGaAs based mesoscopic ring arrays. We applied two different gate insulators, Al2O3 and SiO2, to compare the gate sensitivity for the spin precession. Al'tshuler-AronovSpivak (AAS) oscillations were clearly observed and the resistance amplitude of AAS oscillations at zero magnetic field depends on the gate voltage. The spin precession angle of 2 π is achieved by the gate voltage of 5.4 V for SiO2 gate insulator and 0.6 V for Al2O3 gate insulator. Al2O3 gate is effective for electrical spin manipulation and enables the spin manipulation in a wide range.

AB - We demonstrated gate controlled spin precession in InGaAs based mesoscopic ring arrays. We applied two different gate insulators, Al2O3 and SiO2, to compare the gate sensitivity for the spin precession. Al'tshuler-AronovSpivak (AAS) oscillations were clearly observed and the resistance amplitude of AAS oscillations at zero magnetic field depends on the gate voltage. The spin precession angle of 2 π is achieved by the gate voltage of 5.4 V for SiO2 gate insulator and 0.6 V for Al2O3 gate insulator. Al2O3 gate is effective for electrical spin manipulation and enables the spin manipulation in a wide range.

KW - AlO gate insulator

KW - Ring array structure

KW - Spin interference device

KW - Spin manipulation

UR - http://www.scopus.com/inward/record.url?scp=76249107403&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76249107403&partnerID=8YFLogxK

U2 - 10.1016/j.phpro.2010.01.183

DO - 10.1016/j.phpro.2010.01.183

M3 - Conference article

AN - SCOPUS:76249107403

SN - 1875-3892

VL - 3

SP - 1317

EP - 1320

JO - Physics Procedia

JF - Physics Procedia

IS - 2

T2 - 14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14

Y2 - 13 July 2009 through 17 July 2009

ER -