Electrical responses of chalcogenide films in the photodoping process

Nobuaki Terakado, Keiji Tanaka

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The photodoping process in Al/AsS2/Ag tri-layer films has been studied through measurements of electrical impedance, photodoped-layer thickness, and photocurrent. Frequency dependence of the impedance suggests that the sample under photodoping can be approximated by an equivalent electrical circuit. A thickness of photodoped layers, which is estimated from the impedance, is in agreement with a geometrical thickness measured by an atomic force microscope for chemically etched samples. Under the photodoping (with zero bias voltages), a photocurrent remains constant at ∼ 5 pA, and near the completion it increases to ∼ 1 nA, which is followed with a gradual decrease. By applying a bias voltage between the top (semi-transparent Al) and bottom (Ag) electrodes, we can change a photodoping rate by an order. This rate change is attributable to the modulation of an effective electric field in the doped layer, which induces the motion of Ag ions.

Original languageEnglish
Pages (from-to)3773-3777
Number of pages5
JournalThin Solid Films
Volume519
Issue number11
DOIs
Publication statusPublished - 2011 Mar 31
Externally publishedYes

Keywords

  • Ag-chalcogenide
  • Ion conducting
  • Photo-diffusion
  • Photo-doping
  • Photo-induced
  • Solar-chemical battery

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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