Electrical resistivity of single crystalline CeRh2Si2 under pressure

M. Ohashi, F. Honda, T. Eto, S. Kaji, I. Minamitake, G. Oomi, S. Koiwai, Y. Uwatoko

Research output: Contribution to journalConference articlepeer-review

5 Citations (Scopus)

Abstract

The electrical resistivity of single crystalline CeRh2Si2 has been measured in the temperature range from 2.0 to 300K under high pressure up to 2.3GPa. The coefficient of T2 term A(P) and the residual resistivity ρ0(P) have been obtained as a function of pressure. It is found that A(P) shows one maximum and ρ0(P) show two maxima near the pressure where the magnetic ordering phases disappear. The result is discussed on the basis of pressure-induced quantum phase transition.

Original languageEnglish
Pages (from-to)443-444
Number of pages2
JournalPhysica B: Condensed Matter
Volume312-313
DOIs
Publication statusPublished - 2002 Mar 1
Externally publishedYes
EventInternational Conference on Strongly Correlated Electrons - Ann Arbor, MI, United States
Duration: 2002 Aug 62002 Aug 6

Keywords

  • CeRhSi
  • Electrical resistivity
  • High pressure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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