Electrical Resistivity and High-Field Magnetoresistance of Zr-N Film Thermometers

Masahito Yoshizawa, Kôki Ikeda, Hitoshi Sugawara, Naoki Toyota, Tsutom Yotsuya, Masaaki Yoshitake

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Temperature and magnetic field dependence of the resistivity of Zr-N sputtered films have been measured. The characteristics of Zr-N film, that they can be divided into two groups by the ratio of the resistance at helium and room temperatures, have been precisely investigated. There are marked differences in both the temperature dependence of resistance and in the magnetoresistance between the two groups. The temperature dependence of magnetoresistance of the films has been discussed within the framework of Anderson localization. The origin of magnetoresistance was also discussed.

Original languageEnglish
Pages (from-to)2472-2478
Number of pages7
JournalJapanese journal of applied physics
Volume31
Issue number8 R
DOIs
Publication statusPublished - 1992 Aug

Keywords

  • Electrical resistivity
  • Experiments
  • Localization
  • Low temperature
  • Magnetoresistance
  • Thermometer
  • Thin film

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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  • Cite this

    Yoshizawa, M., Ikeda, K., Sugawara, H., Toyota, N., Yotsuya, T., & Yoshitake, M. (1992). Electrical Resistivity and High-Field Magnetoresistance of Zr-N Film Thermometers. Japanese journal of applied physics, 31(8 R), 2472-2478. https://doi.org/10.1143/JJAP.31.2472