Electrical resistivities under high pressure in CeP0.9N0.1

N. Takeshita, K. Taketomi, T. Mori, T. Matsumura, Akira Ochiai, T. Suzuki, S. Ogawa, N. Môri

Research output: Contribution to journalConference articlepeer-review

Abstract

CeP0.9N0.1 single crystal was grown. Unexpectedly, its lattice constant 5.953 angstroms was slightly larger than 5.932 angstroms of CeP. The electrical resistivities were measured under high pressures of up to 8.5 GPa in the temperature range from 300 down to 2 K. Their characteristics reflecting the devil stair case of magnetic structure were very similar to those of CeP under a negative pressure of about 1 GPa.

Original languageEnglish
Pages (from-to)430-431
Number of pages2
JournalPhysica B: Condensed Matter
Volume281-282
DOIs
Publication statusPublished - 2000 Jun 1
EventYamada Conference LI - The International Conference on Strongly Correlated Electron Systems (SCES '99) - Nagano, Jpn
Duration: 1999 Aug 241999 Aug 28

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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