Electrical resistance change with crystallization in Si-Te amorphous thin films

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electrical resistance change of amorphous SixTe 100-x (x: 10-23) films during heating was investigated by a two-point probe method. The SixTe100-x films showed two-stage crystallization processes. The film was firstly crystallized to Te and subsequently crystallized to Si2Te3 with an electrical resistance drop. The first crystallization temperature Tx 1st slightly increased with increasing Si content, while the second crystallization temperature Tx2nd was independent on the composition and was a constant temperature of 310°C. In all films, the electrical resistance once increased in the temperature range from 250 to 295°C before the crystallization of the Si2Te3. This temporal resistance increase could be explained by considering a formation of high-resistivity Si-rich amorphous phase.

Original languageEnglish
Title of host publicationPhase-Change Materials for Memory and Reconfigurable Electronics Applications
Pages99-104
Number of pages6
Publication statusPublished - 2010 Dec 1
Event2010 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2010 Apr 52010 Apr 9

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1251
ISSN (Print)0272-9172

Other

Other2010 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period10/4/510/4/9

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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