Electrical resistance and structural changes on crystallization process of amorphous Ge-Te thin films

Yuta Saito; Yuji Suto; Junichi Koike

Electrical resistance and structural changes on crystallization process of amorphous Ge-Te thin films

Yuta Saito, Yuji Suto, Junichi Koike

ENG - Materials Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

The electrical resistance and structural changes on the crystallization process of sputter-deposited amorphous Ge_100-xTe_x (x: 46-94) were investigated by two-point probe method. It was found that stoichiometric GeTe amorphous film crystallizes into rhombohedral GeTe single phase, which leads to a large electrical resistance drop, while off-stoichiometric Ge-Te amorphous films show two-stage crystallization or phase separation via single crystalline phase. Especially, Ge₃₃Te ₆₇ amorphous film crystallizes first into metastable GeTe₂ single phase and then decomposes into α-GeTe and Te two-phase with a large electrical resistance change. The first crystallization temperature strongly depends on the composition. The Ge₃₃Te₆₇ film shows the highest crystallization temperature and activation energy for the first crystallization in the film with Te-rich composition.

Original language	English
Title of host publication	Materials and Physics for Nonvolatile Memories
Pages	143-148
Number of pages	6
Publication status	Published - 2009 Dec 1
Event	2009 MRS Spring Meeting - San Francisco, CA, United States Duration: 2009 Apr 13 → 2009 Apr 17

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1160
ISSN (Print)	0272-9172

Other

Other	2009 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	09/4/13 → 09/4/17

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Electrical resistance and structural changes on crystallization process of amorphous Ge-Te thin films",

abstract = "The electrical resistance and structural changes on the crystallization process of sputter-deposited amorphous Ge100-xTex (x: 46-94) were investigated by two-point probe method. It was found that stoichiometric GeTe amorphous film crystallizes into rhombohedral GeTe single phase, which leads to a large electrical resistance drop, while off-stoichiometric Ge-Te amorphous films show two-stage crystallization or phase separation via single crystalline phase. Especially, Ge33Te 67 amorphous film crystallizes first into metastable GeTe2 single phase and then decomposes into α-GeTe and Te two-phase with a large electrical resistance change. The first crystallization temperature strongly depends on the composition. The Ge33Te67 film shows the highest crystallization temperature and activation energy for the first crystallization in the film with Te-rich composition.",

author = "Yuta Saito and Yuji Suto and Junichi Koike",

year = "2009",

month = dec,

day = "1",

language = "English",

isbn = "9781605111339",

series = "Materials Research Society Symposium Proceedings",

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booktitle = "Materials and Physics for Nonvolatile Memories",

note = "2009 MRS Spring Meeting ; Conference date: 13-04-2009 Through 17-04-2009",

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TY - GEN

T1 - Electrical resistance and structural changes on crystallization process of amorphous Ge-Te thin films

AU - Saito, Yuta

AU - Suto, Yuji

AU - Koike, Junichi

PY - 2009/12/1

Y1 - 2009/12/1

N2 - The electrical resistance and structural changes on the crystallization process of sputter-deposited amorphous Ge100-xTex (x: 46-94) were investigated by two-point probe method. It was found that stoichiometric GeTe amorphous film crystallizes into rhombohedral GeTe single phase, which leads to a large electrical resistance drop, while off-stoichiometric Ge-Te amorphous films show two-stage crystallization or phase separation via single crystalline phase. Especially, Ge33Te 67 amorphous film crystallizes first into metastable GeTe2 single phase and then decomposes into α-GeTe and Te two-phase with a large electrical resistance change. The first crystallization temperature strongly depends on the composition. The Ge33Te67 film shows the highest crystallization temperature and activation energy for the first crystallization in the film with Te-rich composition.

AB - The electrical resistance and structural changes on the crystallization process of sputter-deposited amorphous Ge100-xTex (x: 46-94) were investigated by two-point probe method. It was found that stoichiometric GeTe amorphous film crystallizes into rhombohedral GeTe single phase, which leads to a large electrical resistance drop, while off-stoichiometric Ge-Te amorphous films show two-stage crystallization or phase separation via single crystalline phase. Especially, Ge33Te 67 amorphous film crystallizes first into metastable GeTe2 single phase and then decomposes into α-GeTe and Te two-phase with a large electrical resistance change. The first crystallization temperature strongly depends on the composition. The Ge33Te67 film shows the highest crystallization temperature and activation energy for the first crystallization in the film with Te-rich composition.

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M3 - Conference contribution

AN - SCOPUS:77649124276

SN - 9781605111339

T3 - Materials Research Society Symposium Proceedings

SP - 143

EP - 148

BT - Materials and Physics for Nonvolatile Memories

T2 - 2009 MRS Spring Meeting

Y2 - 13 April 2009 through 17 April 2009

ER -

Electrical resistance and structural changes on crystallization process of amorphous Ge-Te thin films

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