TY - GEN
T1 - Electrical resistance and structural changes on crystallization process of amorphous Ge-Te thin films
AU - Saito, Yuta
AU - Sutou, Yuji
AU - Koike, Junichi
PY - 2009/12/1
Y1 - 2009/12/1
N2 - The electrical resistance and structural changes on the crystallization process of sputter-deposited amorphous Ge100-xTex (x: 46-94) were investigated by two-point probe method. It was found that stoichiometric GeTe amorphous film crystallizes into rhombohedral GeTe single phase, which leads to a large electrical resistance drop, while off-stoichiometric Ge-Te amorphous films show two-stage crystallization or phase separation via single crystalline phase. Especially, Ge33Te 67 amorphous film crystallizes first into metastable GeTe2 single phase and then decomposes into α-GeTe and Te two-phase with a large electrical resistance change. The first crystallization temperature strongly depends on the composition. The Ge33Te67 film shows the highest crystallization temperature and activation energy for the first crystallization in the film with Te-rich composition.
AB - The electrical resistance and structural changes on the crystallization process of sputter-deposited amorphous Ge100-xTex (x: 46-94) were investigated by two-point probe method. It was found that stoichiometric GeTe amorphous film crystallizes into rhombohedral GeTe single phase, which leads to a large electrical resistance drop, while off-stoichiometric Ge-Te amorphous films show two-stage crystallization or phase separation via single crystalline phase. Especially, Ge33Te 67 amorphous film crystallizes first into metastable GeTe2 single phase and then decomposes into α-GeTe and Te two-phase with a large electrical resistance change. The first crystallization temperature strongly depends on the composition. The Ge33Te67 film shows the highest crystallization temperature and activation energy for the first crystallization in the film with Te-rich composition.
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M3 - Conference contribution
AN - SCOPUS:77649124276
SN - 9781605111339
T3 - Materials Research Society Symposium Proceedings
SP - 143
EP - 148
BT - Materials and Physics for Nonvolatile Memories
T2 - 2009 MRS Spring Meeting
Y2 - 13 April 2009 through 17 April 2009
ER -