Electrical pumping to III-V layer from highly doped silicon micro wire to realize light emission by plasma-assisted bonding technology

Ling Han Li, Ryo Takigawa, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The direct current pumping from highly doped silicon microwire to InP-based III-V active layer for spontaneous light emission was realized by air ambient plasma-assisted direct bonding. The semi-conductive properties of the hetero-integration and the effects of plasma-assisted bonding process on InGaAsP multiple quantum well (MQW) were measured and discussed. The electrical pumping from silicon microwire to InGaAsP MQW material for spontaneous light emission was successfully demonstrated afterwards.

    Original languageEnglish
    Title of host publication2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
    Pages385-388
    Number of pages4
    DOIs
    Publication statusPublished - 2010 Aug 30
    Event22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan
    Duration: 2010 May 312010 Jun 4

    Other

    Other22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
    CountryJapan
    CityKagawa
    Period10/5/3110/6/4

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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