Electrical pumping Fabry-Perot lasing of a III-V layer on a highly doped silicon micro rib

Linghan Li, Ryo Takigawa, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, Bingyao Liu, Yoshiaki Nakano

    Research output: Contribution to journalArticlepeer-review

    4 Citations (Scopus)

    Abstract

    Direct-current-pumped Fabry-Perot lasing was observed from a Si/III-V hybrid laser fabricated by the Ar/O2 plasma assisted direct bonding of an InP-based III-V active layer on a highly doped silicon micro rib. Electrical pumping from a silicon micro rib to InGaAsP multiple quantum wells (MQWs) for generating CW Fabry-Perot lasing was successfully demonstrated at a threshold current of 65 mA at 5 °C. The semiconductive and optical properties of the hetero-junction between the silicon micro rib and InGaAsP MQWs under direct current injection were measured and discussed.

    Original languageEnglish
    Article number115807
    JournalLaser Physics Letters
    Volume11
    Issue number11
    DOIs
    Publication statusPublished - 2014 Nov 1

    Keywords

    • Ar/O plasma assisted direct bonding
    • Febry-Perot lasing
    • InGaAsP MQWs
    • Si/InGaAsP laser
    • direct current injection

    ASJC Scopus subject areas

    • Instrumentation
    • Physics and Astronomy (miscellaneous)

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