Electrical property modifications of In-doped ZnO films by ion irradiation

N. Matsunami, J. Fukushima, M. Sataka, S. Okayasu, Hiroyuki Sugai, H. Kakiuchida

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


Zinc oxides doped with trivalent elements are known as an n-type transparent semiconductor. We have studied ion irradiation effects on electrical properties, atomic structure and optical properties of In-doped ZnO films. We have observed increase in the electrical conductivity and this is ascribed to ion-induced replacement of Zn on lattice site by In.

Original languageEnglish
Pages (from-to)3071-3075
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number19
Publication statusPublished - 2010 Oct 1


  • Electrical conductivity
  • In-doped ZnO
  • Ion-induced dopant replacement
  • Optical absorption

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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