Electrical property modifications of In-doped ZnO films by ion irradiation

N. Matsunami; J. Fukushima; M. Sataka; S. Okayasu; Hiroyuki Sugai; H. Kakiuchida

doi:10.1016/j.nimb.2010.05.045

Electrical property modifications of In-doped ZnO films by ion irradiation

N. Matsunami, J. Fukushima, M. Sataka, S. Okayasu, Hiroyuki Sugai, H. Kakiuchida

ENG - Quantum Science and Energy Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Zinc oxides doped with trivalent elements are known as an n-type transparent semiconductor. We have studied ion irradiation effects on electrical properties, atomic structure and optical properties of In-doped ZnO films. We have observed increase in the electrical conductivity and this is ascribed to ion-induced replacement of Zn on lattice site by In.

Original language	English
Pages (from-to)	3071-3075
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	268
Issue number	19
DOIs	https://doi.org/10.1016/j.nimb.2010.05.045
Publication status	Published - 2010 Oct 1

Keywords

Electrical conductivity
In-doped ZnO
Ion-induced dopant replacement
Optical absorption

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nimb.2010.05.045

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@article{573f729951e04e15a7635cccdb0c9997,

title = "Electrical property modifications of In-doped ZnO films by ion irradiation",

abstract = "Zinc oxides doped with trivalent elements are known as an n-type transparent semiconductor. We have studied ion irradiation effects on electrical properties, atomic structure and optical properties of In-doped ZnO films. We have observed increase in the electrical conductivity and this is ascribed to ion-induced replacement of Zn on lattice site by In.",

keywords = "Electrical conductivity, In-doped ZnO, Ion-induced dopant replacement, Optical absorption",

author = "N. Matsunami and J. Fukushima and M. Sataka and S. Okayasu and Hiroyuki Sugai and H. Kakiuchida",

year = "2010",

month = oct,

day = "1",

doi = "10.1016/j.nimb.2010.05.045",

language = "English",

volume = "268",

pages = "3071--3075",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "19",

}

TY - JOUR

T1 - Electrical property modifications of In-doped ZnO films by ion irradiation

AU - Matsunami, N.

AU - Fukushima, J.

AU - Sataka, M.

AU - Okayasu, S.

AU - Sugai, Hiroyuki

AU - Kakiuchida, H.

PY - 2010/10/1

Y1 - 2010/10/1

N2 - Zinc oxides doped with trivalent elements are known as an n-type transparent semiconductor. We have studied ion irradiation effects on electrical properties, atomic structure and optical properties of In-doped ZnO films. We have observed increase in the electrical conductivity and this is ascribed to ion-induced replacement of Zn on lattice site by In.

AB - Zinc oxides doped with trivalent elements are known as an n-type transparent semiconductor. We have studied ion irradiation effects on electrical properties, atomic structure and optical properties of In-doped ZnO films. We have observed increase in the electrical conductivity and this is ascribed to ion-induced replacement of Zn on lattice site by In.

KW - Electrical conductivity

KW - In-doped ZnO

KW - Ion-induced dopant replacement

KW - Optical absorption

UR - http://www.scopus.com/inward/record.url?scp=77956171917&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956171917&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2010.05.045

DO - 10.1016/j.nimb.2010.05.045

M3 - Article

AN - SCOPUS:77956171917

SN - 0168-583X

VL - 268

SP - 3071

EP - 3075

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 19

ER -

Electrical property modifications of In-doped ZnO films by ion irradiation

Abstract

Keywords

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